ERB38-04 DSK | Alldatasheet
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FEATURES
Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 0.8A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG Easily cleaned with alcohol,Isopropanol and similar solvents ERB38-04 --- ERB38-06 ERB38 - 04 ERB38 - 05 ERB38 - 06 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE: 400 --- 600 V CURRENT: 0.8 A DO - 41 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 280 3. Thermal resistance f rom junction to ambient. A 20.0 I R I FSM NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. - 55 ----- + 150 - 55 ----- + 150 600 350 500 420 A 5.0 50.0 A 2.5 0.8 400 600 I F(AV) The plastic material carries U/L recognition 94V-0 400 500 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
PEAK FORWARD SURGE CURRENT. REVERSE VOLTAGE,VOLTS FIG.5 -- TYPICAL FORWARD CHARACTERISTIC FIG.4--PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD RECTIFIED CURRENT. AMBIENT TEMPERAT URE. NUMBER OF CYCLES AT 60HZ INSTANTANEOUS FORWARD VOLTAGE, VOLTS ERB38-04 -- ERB38-06 FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF FIG.3--TYPICAL JUNCTION CAPACITANCE SET TIME BASE FOR 20/30 ns/cm FIG.2 --FORWARD DERATING CURVE Z JUNCTION CAPACITANCE,pF 2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω. 0.40 0.01 0.1 T J =25 Pulse Width=300 µ S 1.0 0.8 0 40 20 60 0.6 0.2 0.4 80 100 120 140 0.8 1.2 1.4 150 Single Phase Half Wave 60Hz Resistive or Inductive Load T J =25 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 ERB38-06 ERB38-04---ERB38-05 12 4 1 0 82 0 4 0 6 0 8 0 1 0 0 T J =125 8.3ms Single Half Sine-Wave (+) PULSE GENERATOR (N O T E2) (-) D.U. T. NONI N- DUCTIVE N N1 . OSCI LLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) t rr -1.0A -0.25A +0.5A 1cm Diode Semiconductor Korea www.diode.kr