ERB37-08 DSK | Alldatasheet
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FEATURES
Case:JEDEC DO-41,m olded plas tic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any M AX IM U M R AT IN G S AN D ELEC T R IC AL C H AR AC T ER IST IC S Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERB37-10 UNITS Maximum recurrent peak reverse voltage V RRM 1000 V Max imum RMS v oltage V RMS 700 V Max imum DC blocking v oltage V DC 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 P eak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 1.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. A I R -55----+150 250 -55----+150 100.0 A FAST REC OVE RY RECTIFIERS I F(AV) ERB37-08 1.0 1.5 5.0 DO - 41 Easily cleaned with Freon,Alcohol,Isopropanol ERB37-08---ERB37-10 I FSM 30.0 800 560 800 A The plastic material carries U/L recognition 94V-0 VOLTAGE RANGE: 800--1000 V CURRENT: 1.0 A Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
T J =25 f=1MHz .4 1.0 2 4 10 20 40 100 25 0 50 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.25 0.5 0.75 1.0 1.5 1.25 100 125 175 150 0.6 T J =25 Pulse Width=300uS 0.04 0.01 0.1 0.4 1.0 100 t rr -1.0A -0.25A +0.5A 1cm PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) AMPERES AMPERES JUNCTION CAPACITANCE,pF PAKE FORWARD SURGE CURRENT AMPERES ERB37-08---ERB37-10 2.R ISE TIME=10ns MAX. SOURCE IMPEDA NCE=5O N O TE S:1.R ISE TIME =7ns MAX. INP UT IMPEDA NCE=1M .22pF FIG.2 --TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD RECTIFIED CURRENT R EVER SE VOLT AGE,VOLT S N U MBER O F C YC LES AT 60H z FI G. 4--TYPI CAL JUNCTI ON CAPACI TANCE FI G. 5--PEAK FORWARD SURGE CURRENT FI G. 1 -- REVERSE RECOVERY TI ME CHARACTERI STI C AND TEST CI RCUI T DI AGRAM SET TIME BASE FOR 50/100 ns /cm INSTANTANEOUS FORWARD CURRENT FI G. 3 -- FORWARD DERATI NG CURVE INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE. 1 2 4 1082 0 4 0 6 0 8 0 100 T J =125 8.3ms Single Half Sine-Wave www.diode.kr Diode Semiconductor Korea