ER3A DSK | Alldatasheet
Document overview
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Technical content
3.1± 0.25 6.9± 0.25 5. 9 ± 0. 25 2. 3 ± 0. 15 1. 3± 0. 25 0.203MAX 7.8± 0. 2 0.25± 0.06
FEATURES
Case:JEDEC DO-214AB,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.21 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ER3B ER3C ER3D ER3E ER3G ER3J UNITS Maximum recurrent peak reverse voltage V RRM 100 150 200 300 400 600 V Max imum RMS v oltage V RMS 70 105 140 210 280 420 V Maximum DC blocking voltage V DC 100 150 200 300 400 600 V Maximum average forw ard rectified current A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 3.0A V F 1.7 V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =125 M axim um reverse recovery tim e (Note 1) t rr ns Typical junction capacitance (Note 2) C J pF Typical thermal resistance (Note 3) R θJA Operating junction temperature range T J Storage temperature range T STG 1.25 3.Thermal resistance junction to ambient. A 100 I R I FSM NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A - 55 ----- + 150 ER3A --- ER3J A 5.0 Easily cleaned with alcohol,Isopropanol and similar solvents I F(AV) 3.0 SURFACE MOUNT RECTIFIER ER3A - 55 ----- + 150 300 0.95 The plastic material carries U/L recognition 94V-0 VOLTAGE RANGE: 50 --- 600 V CURRENT: 3.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DO - 214AB(SMC) Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
CURRENT,AMPERES AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES INSTANTANEOUS FORWARD FIG.6 -- TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE. CURRENT,AMPERES AVERAGE FORWARD CURRENT JUNCTION CAPACITANCE,pF FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, ER3A --- ER3J FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC SET TIME BASE FOR 10 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS PEAK FORWARD SURGE t rr -1.0A -0.25A +0.5A 1cm 0.1 1.0 1000 20 40 100 0.01 60 800 100 T J =100 120 140 T J =75 T J =25 N NONIN- DUCTIVE N (+) 25VDC (approx) (-) D.U.T. PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 8.3ms Single Half Sine-W ave 120 100 1 2 5 10 20 50 100 T J =25 f=1.0MHz 100 200 400 600 1000 0.1 0.2 0.4 1 2 4 10 40 100 20 1.5 3.0 0 25 50 75 100 125 150 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.375"(9.5mm)Lead length 175 0.5 1.0 2.0 2.5 1.0 2.0 3.0 4.0 T J =25 Pulse Width=300 µ s ER306 ER3A - ER3D ER3E - ER3G Diode Semiconductor Korea www.diode.kr