ER301 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o 3.0A
- VRRM 100V-600V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode ER30X X:From 1 to 6 DO-2 DO-27 Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Electrical Characteristics (Ta=25℃ Unless otherwise specified) ER30 Item Symbol Unit Test Condition Peak Forward Voltage V FM V I FM =3.0A I RRM1 Ta=25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta=125℃ 50 Reverse Recovery time t rr ns I F =0.5A I R =1A I RR =0.25A 35 R θJ-A Between junction and ambient 30 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 10 0.95 1.7 1.25 1 2 3 4 6 Item Symbol Unit I F(AV) I FSM I 60Hz Half-sine wave, Resistance load, Ta=50℃ 60Hz Half-sine wave,1 cycle, Ta=25℃ ER30 100 200 300 400 600 3.0 125 70 140 210 280 420 V RMS V Maximum RMS Voltage ER3 0 1 THRU ER3 0 6
H igh Diode Semiconductor 1.5 2.25 50 150 FIG.1 FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length Ta( 100 0.75 3.0 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 12 1 0 2 0 100 100 150 175 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.2 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) ER301-ER302 ER303-ER304 ER306 FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers