ER1AB DSK | Alldatasheet
Document overview
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
Case:JEDEC SMB,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.003 ounces, 0.093 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ER1AB ER1BB ER1CB ER1DB ER1EB ER1GB ER1HB ER1JB UNITS Maximum recurrent peak reverse voltage V RRM 50 100 150 200 300 400 500 600 V Max imum RMS v oltage V RMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage V DC 50 100 150 200 300 400 500 600 V Maximum average forw ard rectified current A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 1.0A V F 1.7 V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =125 M axim um reverse recovery tim e (Note 1) t rr ns Typical junction capacitance (Note 2) C J pF Typical thermal resistance (Note 3) R θJA Operating junction temperature range T J Storage temperature range T STG 1.25 SMB 3.Thermal resistance junction to ambient. A 30.0 I R I FSM NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A - 55 ----- + 150 ER1AB---ER1JB A 5.0 Easily cleaned with alcohol,Isopropanol and similar solvents I F(AV) 1.0 SURFACE MOUNT RECTIFIERS - 55 ----- + 150 100 0.95 The plastic material carries U/L recognition 94V-0 VOLTAGE RANGE: 100 --- 600 V CURRENT: 1.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
CURRENT, AMPERES AMPERES INSTANTANEOUS REVERSE CURRENT, MICROAMPERES NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS ER1AB---ER1JB FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC SET TIME BASE FOR 10/20 ns/cm INSTANTANEOUS FORWARD FIG.6 -- TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE. CURRENT, AMPERES AVERAGE FORWARD CURRENT JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, t rr -1.0A -0.25A +0.5A 1cm N NONIN- DUCTIVE N (+) 25VDC (approx) (-) D.U.T. PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 10 100 8.3ms Single Half Sine-Wave 0.01 0.1 1.0 2.0 T J =25 Pulse Width=300 µ s ER1AB - ER1DB ER1EB - ER1GB ER1HB-ER1JB 0.1 1.0 1000 20 40 10060 800 100 T J =100 120 T J =75 T J =25 T J =25 f=1.0MHz 100 0.1 0.2 0.4 1 2 4 10 40 10020 0.5 1.0 0 25 50 75 100 125 150 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.375"(9.5mm)Lead length 175 Diode Semiconductor Korea www.diode.kr