EPD-1300-0-3.0 ROITHNER | Alldatasheet
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Technical content
Preliminary rev. 02/06 Wavelength Infrared Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Symbol Value Unit A 7,0 mm² Temperature coefficient TC(ID) 0,074 1/K Tamb -40 to +85 °C Tstg -40 to +100 °C Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Forward voltage IF = 10 mA V F 0,6 V Breakdown voltage IR = 10 µA V R 51 8 V Dark current VR = 5 V I D 5,0 30,0 nA Responsivity at 1300 nm VR = 0 V Sλ 0,9 A/W Sensitivity range at 20% VR = 5 V λmin, λmax 800 1700 nm Spectral bandwidth at 50% VR = 5 V ∆λ0.5 780 nm Dark resistance VR = 10 mV R D 15 30 MΩ Noise equivalent power λ = 1300 nm NEP 4.6x10-14 WHz1/2 Junction capacitance VR = 0 V C J 1000 1300 pF Photo current at 1300 nm* VR = 0 V Ee = 1mW/cm² IPh 15 µA * for information only Note: All measurements carried out with calibrated equipment EPD-1300-0-3.0 Type Parameter Case TO-39 Technology InGaAs/InPPlanar Active area Storage temperature range Operating temperature range Test сonditions InGaAs-Photodiode mounted in TO-39 standard package . High spectral sensitivity in the infrared range (NIR , SWIR) due to large active area.
Description
Applications
Optical communications, safety equipment, light barriers 5,90 ± 0,1 8,13 ± 0,1 13,5 ± 1,0 0,45 2,00 ± 0,05 Ø9,14 Ø7,62 9,90 ± 0,1 45,00° 0,80 ± 0,05 3,25 ± 0,1 Chip Location Chip Location Anode ELC-70
Preliminary rev. 02/06 EPD-1300-0-3.0 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 Typical Optical Responsivity (A/W) Wavelength [nm]