EPD-1300-0-0.5 ROITHNER | Alldatasheet
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§ ROITHNER LASERTECHNIK emu ——— WIEDNER HAUPTSTRASSE 76 1040 VIENNA AUSTRIA = TEL. +43 1 586 52 43 -O, FAX. -44, OFFICE@ROITHNER-LASER.COM Photodiode EPD-1300-0-0.5 Preliminary 6/21/2007 rev, 03/07
Description
InGaAs-Photodiode mounted in TO-18 Istandard package covered with epoxy. pet “ High spectral sensitivity in the infrared ; Auplating epoxy-lens ; range (NIR, SWIR). — nd - ¢ > yt mode : { H i 3 | el TT Re cn, ——S (ne \\ f xo Applications tle2 +8, Optical communications, ses atta “ safety equipment, light barriers Miscellaneous Parameters Tams = 25, unless otherwise specified Temperature coefficient [Tele 0.074 Optical and Electrical Characteristics Tam = 25, unless otherwise specified Test . Breakdown voltage” mewyAT ve fos [ot fT Responsivity at 1300nm" [ Vasov [os ff os fT [oaneuren | Vawsv |b | | 250 | to00 | pa _| Noise equivalent power [x= 1300nm] NEP [| atta [Wve | [Junction capacitance | Va=OV [oc fT as measured on bare chip on TO-18 header 2Mfor information only
§ ROITHNER LASERTECHNIK emu _——— WIEDNER HAUPTSTRASSE 76, 1040 VIENNA AUSTRIA ——_— TEL. +43 1586 52 43 -O, FAX. -44, OFFICE@ROITHNER-LASER.COM Photodiode EPD-1300-0-0.5 Preliminary 6/21/2007 rev. 03/07 Typical Optical Responsivity (A/W) 400 600 800 1000 1200 1400 1600 1800 Wavelength [nm]