EGP30A DSK | Alldatasheet
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Technical content
FEATURES
Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EGP 30C EGP 30D UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage @ 3.0 A V F V M axim um reverse current @T A =25 at rated DC blocking voltage @T A =125 Maximum reverse recovery tim e (Note1) t rr ns Typical junction capacitance (Note2) C J pF R θJA R θJL Operating junction temperature range T J Storage temperature range T STG VOLTAGE RANGE: 50 --- 800 V CURRENT: 3.0 A 35 70 105 140 210 280 420 560 MAXIMUM RATINGS AND ELECTRICA L CHARACTERISTICS 3.Thermal resistance junction to ambient. I FSM I R NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55 ---- + 150 A - 55 ---- + 150 DO - 27 EGP30A(Z) --- EGP30K(Z) 8.5 EGP 30B A High surge current capability HIGH EFFICIENCY RECTIFIERS Easily cleaned with alcohol,Isopropanol and similar solvents 3.0 50 100 150 200 300 400 600 800 The plastic material carries U/L recognition 94V-0 Case:JEDEC DO--27,molded plastic EGP 30A 50 100 150 200 300 400 600 800 EGP 30F Typical thermal resistance (Note3) I F(AV) A 125.0 0.95 1.25 1.7 5.0 100.0 EGP EGP EGP 30G 30J 30K 95 75 50 75 Typical thermal resistance (Note4) 4.Thermal resistance junction to lead. Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS AVERAGE FORWARD CURRENT SET TIME BASE FOR 20/30 ns/cm JUNCTION CAPACITANCE,pF NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURRENT FIG TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC EGP30A(Z)---EGP30K(Z) T J =25 Pulse Width=300 µ S 0.20 0.1 100 EGP30A-EGP30D 21.6 1.8 E G P 3 0 F - E G P 3 0 G 0.1 1 10 100 EGP30A-EGP30D EGP30F&EGP30K 1000 T J =25 100 125 150 175 (+) PULSE GENERATOR (NOTE2) (-) D. U. T. NONI N- DUCTI VE N N1 . OSCI LLOSCOPE (N O TE 1) (+) 25VDC (approx) (-) -1 .0 A 0 .2 5A +0.5A t rr 1cm EGP30J-EGP30K 1.0 2.0 3.0 0 25 50 75 100 125 150 Single Phase Half Wave 60Hz Resistive or Inductive Load 10 100 T J =125 3ms Single Half Sine-Wave 100 125 150 175 Diode Semiconductor Korea www.diode.kr