EGP20A DSK | Alldatasheet
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FEATURES
Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Max imum rec ur rent peak rev er s e v oltage V RRM 50 100 150 200 300 400 600 800 V Max imum RMS v oltage V RMS 35 70 105 140 210 280 420 560 V Max imum DC bloc king v oltage V DC Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 2.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =125 M axim um reverse recovery (Note1) t rr ns Typical junction capacitance (Note2) C J pF R θJA R θJL Operating junction temperature range T J Storage temperature range T STG 3.Thermal resistance f rom junction to ambient. I FSM I R NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A 1.25 1.7 Typical thermal resistance (Note3) - 55 ---- + 150 0.95 EGP20A(Z) --- EGP20K(Z) A I F(AV) 2.0 HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 50 --- 800 V CURRENT: 2.0 A M AXIM UM R AT ING S AND ELECT R ICAL C HAR AC T ER IST IC S Case:JEDEC DO--15,molded plastic EGP EGP EGP EGP EGP EGP EGP EGP 20A 20B 20C 20D 20F 20G 20J 20K The plastic material carries U/L recognition 94V-0 DO - 15 High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents A - 55 ---- + 150 70 45 5.0 100 50 100 150 200 300 400 600 800 V Typical thermal resistance (Note 4) 4.Thermal resistance from junction to lead. Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.01 0.1 EGP20A-EGP20D EGP20J-EGP20K EGP20F-EGP20G Pulse Width=300 µ s 1% DUTY CYCLE AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURRENT FIG TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC EGP20A(Z)---EGP20K(Z) AVERAGE FORWARD CURRENT SET TIME BASE FOR 20/30 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS 0.375"(9.5mm)LEAD LENGTH 25 0 0.5 1.5 2.0 10075 125 150 175 EGP20A-EGP20k Single Phase Half Wave 60Hz Resistive or Inductive Load 1 10 100 105 T J =125 8.3ms Single Half Sine-Wave EGP20A-EGP20K 0.10
20 EGP20A-EGP20D
EGP20F&EGP20K 1 10 010 1000 120 100 140 T J =25 (-) PU LSE GENERATOR (NOTE2) (+) D.U.T. NONIN- DUCTIVE N N1 . OSCI LLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) t rr -1.0A -0.25A +0.5A 1cm Diode Semiconductor Korea www.diode.kr