EG2113D EGMICRO | Alldatasheet
Document overview
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- PDF pages: 14
Technical content
Datasheet sections
- 7.1 Limit parameters
- 7.2 Typical parameters
- 7.3 Switching time characteristics and dead time waveform diagram
- 8.1 VCC terminal supply voltage
- 8.2 Input logic signal requirements and output driver characteristics
- 8.3 Bootstrap circuit
- 9.1 SOW16 Package size
- 9.2 SOP16 Package size
2019 © Yijing Microelectronics Co., Ltd. All rights reserved REV 1.0 High-power MOS transistor, IGBT transistor gate driver chip
Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip Version Change record Version № Date Description V1.0 May 18, 2019 First draft of the EG2113D Datasheet 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com
EG2113D DatasheetV1.0 1. Features ◼ High-end suspension bootstrap power supply design, withstand voltage up to 600V ◼ Integrated internal bootstrap diode,fewer peripheral devices ◼ Maximum frequency support 500KHZ ◼ Low-side VDD voltage range 3.3 V-5V ◼ Low-side VCC voltage range 10V-20V ◼ Output current capability IO+/- 2A/2A ◼ Built-in dead zone control circuit ◼ Comes with locking function, completely eliminate the upper and lower tube output is turned on at the same time ◼ HIN input channel is active high to control the high-side HO output ◼ LIN input channel is active high to control the low-side LO output ◼ Quiescent current less than 50uA ◼ Package form: SOW16 and SOP16 2. Description EG2113D is a cost-effective high-power MOS transistor, IGBT transistor Gate Drive dedicated chip, integrated logic signal input processing circuit, dead zone control circuit, latch circuit, level displacement circuit, pulse filter circuit, bootstrap diode and output drive circuit, dedicated to brushless motor controller drive circuit. EG2113D high-end operating voltage up to 600V, low-end VCC supply voltage range is wide 10V ~ 20V, static power consumption is less than 50uA.The chip has a latching function to prevent the output power tube is turned on at the same time,the input channel HIN and LIN built - in a 200k pull-down resistor, when the input floating so that the upper and lower power MOS transistor is turned off, the output current capability IO+/ - 2A/2A, using SOP16 and SOW16 package. 3. Application Areas ◼ Sine wave inverter ◼ Variable frequency pump controller ◼ Square wave inverter ◼ Electric vehicle controller ◼ Brushless motor driver ◼ High voltage Class-D power amplifier Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com
- Pin 4.1. Pin definition LO SD VSS EG2113D COM VCC NC NC NC VS VB HO NC NC VDD HIN LIN Figure 4-1. SOW16 and SOP16L Note: SOW16 and SOP16 two packages, but the pin is exactly the same. Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com
4.2. Pin description Pin serial № Pin name I/O Description
1 LO O The output controls the conduction and shutdown of the low-side MOS transistor
2 COM GND Power ground
3 VCC Power Chip power input, voltage range 10V-20V,an external high frequency 0.1 uF bypass capacitor
4 NC - Empty feet
5 NC - Empty feet
6 VS O High-end suspended Ground end
7 VB Power High-end suspended power supply
8 HO O The output controls the on and off of the high-side MOS transistor
9 NC - Empty feet
10 NC - Empty feet
11 VDD Power Logic circuit power supply terminal, voltage range 3.3 V-5V,an external high frequency 0.1 uF bypass capacitor
12 HIN I
Logic input signal active high to control the high-side power MOS transistor is turned on and off "0” is the off power MOS transistor "1” is the open power MOS transistor
13 SD I Logic input, Active High, used to turn off the outputs of HO and LO
14 LIN I
Logic input signal active low, control the low-side power MOS transistor is turned on and off "0” is the off power MOS transistor "1” is the open power MOS transistor
15 VSS GND Ground end of the chip
16 NC Empty feet
Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com
- Electrical characteristics
7.1 Limit parameters
Without further explanation, at TA=25℃ conditions Symbols Parameter name Test conditions Min. Max. Units High side floating absolute voltage VB - -0.3 600 V High side floating supply offset voltage VS - VB-20 VB+0.3 V High side floating supply offset voltage HO - VS-0.3 VB+0.3 V Low side output voltage LO - -0.3 VCC+0.3 V Low side and logic fixed supply voltage VCC - -0.3 20 V Power supply VDD - -0.3 5 V Logic input voltage (HIN) HIN - -0.3 VDD+0.3 V Logic input voltage (LIN) LIN - -0.3 VDD+0.3 V TA Ambient temperature - -45 105 ℃ Tstr Storage temperature - -55 150 ℃ TL Lead temperature (soldering, 10 seconds) T=10S - 300 ℃ Note: exceeding the listed limit parameters may cause permanent damage to the chip, operating in extreme conditions for a long time will affect the reliability of the chip. Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com
7.2 Typical parameters
Without further explanation, at TA=25℃, Vcc=15v, load capacitance CL=1NF conditions Vcc - 10 15 20 V Icc - 50 100 uA Vin(H) 2.5 - - V Vin(L) -0.3 0 1.0 V Iin(H) Vin=5V - - 20 uA Iin(L) Vin=0V -20 - - uA Vcc(on) - 7.4 8.4 9.4 V Vcc（off） - 7.0 8.0 9.0 V VB（off） - 7.2 8.2 9.2 V Ton - 350 450 ns Toff - 200 300 ns Tr - 20 25 ns Tf - 15 20 ns Ton - 350 400 ns Toff - 200 400 ns Tr - 20 25 ns Tf - 15 20 ns DT 50 150 250 ns IO+ Vo=0V,VIN=VIH +2 - A Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com Parameter name Symbols Test conditions Min. Typical Max. Units Power supply Quiescent current Input logic signal high potential Input logic signal low potential Current at the high level of the input logic signal Input logic signal low current Input dangling，VСС=15V All input control signals All input control signals VCC supply undervoltage shutdown feature VCC turn-on voltage Vcc shutdown voltage VB supply undervoltage shutdown feature VB turn-on voltage VB shutdown voltage Low-side output LO switching time characteristics On delay See Figure 7-1 Off delay See Figure 7-1 Rise Time See Figure 7-1 Fall time See Figure 7-1 High-side output HO switching time characteristics On delay See Figure 7-2 Off delay See Figure 7-2 Rise Time See Figure 7-2 Fall time See Figure 7-2 Dead time characteristics Dead time IO output maximum drive capability IO output pull current See Figure 7-3
PW≤10uS IO Output sink current IO- Vo=12V,VIN=VIL PW≤10uS -2 - A
7.3 Switching time characteristics and dead time waveform diagram
50% 50% 90% 90% 10% 10% LIN LO Ton Tr Toff Tf 50% 50% 90% 90% 10% 10% HIN HO Figure 7-1. Low-side output LO switching time waveform diagram Figure 7-2. High-side output HO switching time waveform diagram DT 50% 50% LO HIN LIN 90% 90% 10% 10% HO DT 50% 50% Figure 7-3. Dead time waveform diagram Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com
- Application design
8.1 VCC terminal supply voltage
For different MOS transistor, select a different driving voltage,high voltage to open the MOS transistor recommended power supply Vcc operating voltage is typically 10V-15V; low voltage to open the MOS transistor recommended power supply VDD operating voltage 3.3 V-5V.
8.2 Input logic signal requirements and output driver characteristics
The main functions of the EG2113D are logic signal input processing,dead time control, level translation function, floating bootstrap power structure and upper and Lower Bridge totem pole output.Logic signal input high threshold of 2.5 V or more, low threshold of 1.0 V or less, the requirements of the output current of the logic signal is small,you can make the MCU output logic signal is directly connected to the EG2113D input channel. Up to 2A and the maximum output current up to 2A, the high-end arm channel can withstand 600V voltage, the input logic signal and the output control signal between the conduction delay is small,the low-end output opening conduction delay of 350ns, turn-off conduction delay of 200ns, high-end output opening conduction delay of 350ns, turn-off conduction delay of 200ns.The rise time of the low-side output is 25ns, the fall time of the shutdown is 15ns, the rise time of the high-side output is 25ns, the fall time of the shutdown is 15ns. Input signal and output signal logic function diagram shown in Figure 8-2： Figure 8-2. Input signal and output signal logic function diagram Logic truth table for input and output signals： Input Output Input and output logic HIN LIN HO LO 0 0 0 0 0 1 0 1 1 0 1 0 1 1 0 0 HIN LIN HO LO 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com
From the truth table, when the input logic signal HIN is “1” and LIN is “0”, The Drive control output HO is “1” on the tube is opened, LO is “0” under the tube is turned off; when the input logic signal HIN is “0” and LIN is “1”, the drive control output HO is “0” on the tube is turned off, LO is “1” under the tube is opened; 0 “the upper and lower power tube is turned off at the same time; internal logic processor to prevent the controller output, the lower power tube is turned on at the same time, with mutual locking function.
8.3 Bootstrap circuit
The EG2113D adopts a bootstrap floating drive power structure to greatly simplify the design of the drive power supply. Only one power supply voltage VCC can complete the drive of the two power switching devices of the high-end N-channel MOS transistor and the low-end N-channel MOS transistor, which brings practical application. It's a great convenience. EG2113D can use an internal bootstrap diode as shown in Figure 8-3 and a bootstrap capacitor to automatically complete the bootstrap boost function. It is assumed that the C bootstrap capacitor has been charged to a sufficient voltage during the period when the lower tube is turned on and the upper tube is turned off (Vc=VCC) ), when the HO output high level, when the upper tube is turned on and the lower tube is turned off, the voltage on the VC bootstrap capacitor will be equivalent to a voltage source as the power supply for the internal drivers VB and VS to complete the drive of the high-side N-channel MOS tube. +600V 自举电容 VB HO VS VCC LO EG2113D +12V LIN HIN VC Figure 8-3. EG2113D bootstrap circuit structure Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com
- Package size
9.1 SOW16 package size
Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com
9.2 SOP16 package size
Symbols Size (mm） Min Max A 1.350 1.750 A1 0.100 0.250 A2 1.350 1.550 B 0.330 0.510 C 0.190 0.250 D 9.800 10.000 E 3.800 4.000 E1 5.800 6.300 e 1.270（TYP） L 0.400 1.270 Θ 0° 8° Yijing Microelectronics Co., Ltd EG2113D Datasheet V1.0 High-power MOS transistor, IGBT transistor gate driver chip 2019 ©Yijing Microelectronics Co., Ltd www.egmicro.com