ECONOPACK3

SIGC156T120R2C INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003 IGBT Chip in NPT-technology This chip is used for: power module BSM100GD120DN2 FEATURES: 1200V NPT technology 200µm chip low turn-off losses short tail current positive temperature coefficient easy paralleling integrated gate resistor Applications: drives G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC156T120R2C 1200V 100A 12.59 X 12.59 mm2 sawn on foil Q67041- A4661-A003 MECHANICAL PARAMETER: Raster size 12.59 X 12.59 Emitter pad size 8 x ( 3.98 x 2.38 ) Gate pad size 1.46 x 0.8 Area total / active 158.5 / 132.6 mm2 Thickness 200 µm Wafer size 150 mm Flat position grd Max.possible chips per wafer 82 pcs Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1% Collector metallization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, <500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003 MAXIMUM RATINGS: Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C VCE 1200 V DC collector current, limited by Tjmax I C 1 ) A Pulsed collector current, tp limited by Tjmax I cpuls 300 A Gate emitter voltage VGE ±20 V Operating junction and storage temperature Tj, Ts t g -55 ... +150 1 ) depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Value Parameter Symbol Conditions min. typ. max. Unit Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC=5mA 1200 Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=100A 2.0 2.5 3.0 Gate-emitter threshold voltage VGE(th) IC=4mA , VGE=VCE 4.5 5.5 6.5 V Zero gate voltage collector current ICES VCE=1200V , VGE=0V 600 µA Gate-emitter leakage current IGES VCE=0V , VGE=20V 600 nA Integrated gate resistor RGint Ω ELECTRICAL CHARACTERISTICS (tested at component): Value Parameter Symbol Conditions min. typ. max. Unit Input capacitance Ciss 6.5 Output capacitance Coss Reverse transfer capacitance Crss VC E=25V, VGE=0V, f=1MHz 0.5 nF SWITCHING CHARACTERISTICS (tested at component), Inductive Load Value Parameter Symbol Conditions 1) min. typ. max. Unit Turn-on delay time t d(on) 160 320 Rise time t r 160 Turn-off delay time t d ( o f f ) 400 520 Fall time t f Tj=125°C VC C=600V, I C=100A, VGE=+15/ -15V, RG=6.8 Ω 100 ns 1) values also influenced by parasitic L- and C- in measurement and package.

Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003 CHIP DRAWING:

Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet BSM100GD120DN2 ECONOPACK3 DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.