ECKT3A391KB

ECCT3H050DGM PANASONIC | Alldatasheet

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Technical content

Design and specifi cations are each subject to change without notice. Ask factory for the current technical specifi cations before purchase and/or use. Should a safety concern arise regarding this product, please be sure to contact us immediately. High Voltage Ceramic Capacitors (SMD) E C 23456789 1 0 1 1 1 2 Product Code Class Class1 Class2 Code ECC ECK Rated Voltage Code Rated Voltage 1 kVDC 2 kVDC 3 kVDC 4 kVDC 5 kVDC Code G B Temp. Char. SL/GP B/Y5P Temp. Char.Packaging Style Code T Style Taped type Capacitance 10 pF 47 pF 100 pF 220 pF Nominal Capacitance Tol. ±0.5 pF ±5% ±10 % ±20 % Cap. Tolerance T3F470JG Ex. 100 470 101 221 Code D J K M Code Nil M Y Style code Suffix C Electrode Terminal Ceramic Element Molded Resin Electrode Terminal Ceramic Element Molded Resin SS L A B W E H This Figure applied to Style Code 2, 4 (Add dim.L1)L High Voltage Ceramic Capacitors For Surface Mounting 1 to 5 kVDC ■ Recommended Application

• Ballast circuit of LCD backlighting inverter (For 3 to 5 kVDC Char.SL/GP)
• Snubber circuit of switching power supply (For 1 to 2 kVDC Char.B/Y5P) ■ Features
• Resin molded SMD type for refl ow solderings
• High reliability through use of disc capacitor element
• Wide rated voltage ranges from 1 kV to 5 kV, through a disc element which withstand high voltage and outcurve terminals
• Wide rated voltage range 1 to 5 kV ■ Explanation of Part Numbers ■ Dimensions in mm (not to scale)
• style 1, 3
• style 2, 4● Outside Terminal ■ Construction
• Inside Terminal Symbol L1 L W H S E A B Dim (mm) Dec. 2007

Design and specifi cations are each subject to change without notice. Ask factory for the current technical specifi cations before purchase and/or use. Should a safety concern arise regarding this product, please be sure to contact us immediately. High Voltage Ceramic Capacitors (SMD) E C Dr A Wt B Chip component Tape running direction (W=12 mm) Feeding hole Chip pocket P2 P0 φD0 A B F W E Chip component Tape running direction Feeding hole Chip pocket P2 P0 φD0 F W E A B ■ Specifi cations Characteristics Operating Temperature Range Char. SL/GP Char. B/Y5P –25 to 105 °C Rated Voltage2 t o 3 kVDC 4 to 5 kVDC 5 kVDC 1 to 2 kVDC Dielectric Withstanding Voltage 200 % of Rated Voltage for 1 to 5 seconds 150 % of Rated Voltage for 1 to 5 seconds 120 % of Rated Voltage for 1 to 5 seconds 200 % of Rated Voltage for 1 to 5 seconds Capacitance Within the specifi ed tolerance, when measured at 1 MHz±20 %, 1 to 5 Vrms. and 20 °C Within the specifi ed tolerance, when measured at 1 kHz±20 %, 1 to 5 Vrms. and 20 °C Q or Dissipation Factor (tan δ) 30 pF or under Q > 400+20 C (C:Cap.pF) over 30 pF Q > 1000 at 1 MHz±20 %,1 to 5 Vrms. and 20 °C tan δ < 0.025 at 1 kHz±20 %,1 to 5 Vrms. and 20 °C Insulation Resistance 10000 M /L50529 min. at 500 VDC and 1 minute electrifi cation Temperature Characteristics Temperature Coeffi cient: +350 to –1000 ppm/ °C (Temperature Range : 20 to 85 °C) Max. Cap. Change:±10 % (Temperature Range : –25 to 85 °C) ■ Packaging Methods (Taping)

• Minimum Quantity/Packing Unit
• Reel ● Embossed Carrier Taping style 1, 3, 4 style 2 Type Packaging Style Part Number Minimum Packing Quantity Packing Quantity in Carton Carton Dimensions in mm L/L1154W/L1154H 1 to 5 kVDC (style 1) Embossed Carrier Taping EC/L52408T3/L52408/L52408/L52408/L52408/L52408/L524085 to 470 pF 2000 pcs./reel 6000 pcs. 350 /L1154350/L115462 5 kVDC (style 2) Embossed Carrier Taping ECCT3H/L52408/L52408/L52408/L52408/L52408M 5 to 27 pF 2000 pcs./reel 4000 pcs. 350 /L1154350/L115462 4 kVDC (style 3) Embossed Carrier Taping ECCT3G/L52408/L52408/L52408JG2 10 to 27 pF 3000 pcs./reel 9000 pcs. 350 /L1154350/L115462 5 kVDC (style 4) Embossed Carrier Taping ECCT3H/L52408/L52408/L52408/L52408/L52408Y 5 to 15 pF 3000 pcs./reel 6000 pcs. 350 /L1154350/L115462 Unit:(mm) Symbol A B W F E P 1 P2 P0 φD0 t1 t2 Dim. (mm) style1 6.5 ±0.2 7.5 ±0.2 12.0 ±0.3 5.5 ±0.1 1.75 ±0.10 8.0 ±0.1 2.0 ±0.1 4.0 ±0.1 1.5 +0.1 0.3 ±0.1 3.2 ±0.3 style2 6.65 ±0.20 11.2 ±0.2 24.0 ±0.3 11.5 ±0.1 1.75 ±0.10 12.0 ±0.1 2.0 ±0.1 4.0 ±0.1 1.5 +0.1 0.3 ±0.1 3.2 ±0.3 style3 4.8 ±0.2 6.0 ±0.2 12.0 ±0.3 5.5 ±0.1 1.75 ±0.10 8.0 ±0.1 2.0 ±0.1 4.0 ±0.1 1.5 +0.1 0.3 ±0.1 2.8 ±0.3 style4 4.7 ±0.2 10.0 ±0.5 16.0 ±0.3 7.5 ±0.1 1.75 ±0.10 8.0 ±0.1 2.0 ±0.1 4.0 ±0.1 1.5 +0.1 0.3 ±0.1 2.85 ±0.30 Unit:(mm) Symbol ABCDEWt r Dim. (mm) style 1, 3 13.5±1.5 style 4 17.5±1.5 Dec. 2007

Design and specifi cations are each subject to change without notice. Ask factory for the current technical specifi cations before purchase and/or use. Should a safety concern arise regarding this product, please be sure to contact us immediately. High Voltage Ceramic Capacitors (SMD) Not loaded 40 mm min. Not loaded 20 mm min. Leader tape 400 mm min. Chip component position

• Leader Part and Taped End Rated VoltageP a r t Number Capacitance (pF) Cap. Tolerance (%) Temp. Char Style 5 kVDC ECCT3H050DGM 5± 0 . 5 p F SL/GP Style 2 ECCT3H100JGM 10 ±5 SL/GP ECCT3H120JGM 12 ±5 SL/GP ECCT3H150JGM 15 ±5 SL/GP ECCT3H180JGM 18 ±5 SL/GP ECCT3H220JGM 22 ±5 SL/GP ECCT3H270JGM 27 ±5 SL/GP ECCT3H050DGY 5± 0 . 5 p F SL/GP Style 4 ECCT3H080DGY 8± 0 . 5 p F SL/GP ECCT3H100JGY 10 ±5 SL/GP ECCT3H120JGY 12 ±5 SL/GP ECCT3H150JGY 15 ±5 SL/GP 4 kVDC ECCT3G100DG2 10 ±0.5 pF SL/GP Style 3 ECCT3G120JG2 12 ±5 SL/GP ECCT3G150JG2 15 ±5 SL/GP ECCT3G180JG2 18 ±5 SL/GP ECCT3G220JG2 22 ±5 SL/GP ECCT3G270JG2 27 ±5 SL/GP ECCT3G330JG 33 ±5 SL/GP Style 1ECCT3G390JG 39 ±5 SL/GP ECCT3G470JG 47 ±5 SL/GP 3 kVDC ECCT3F100DG2 10 ±0.5 pF SL/GP Style 3 ECCT3F120JG2 12 ±5 SL/GP ECCT3F150JG2 15 ±5 SL/GP ECCT3F180JG2 18 ±5 SL/GP ECCT3F220JG2 22 ±5 SL/GP ECCT3F270JG2 27 ±5 SL/GP ECCT3F330JG2 33 ±5 SL/GP ECCT3F390JG 39 ±5 SL/GP Style 1 ECCT3F470JG 47 ±5 SL/GP ECCT3F560JG 56 ±5 SL/GP 2 kVDC ECCT3D680JG 68 ±5 SL/GP ECKT3D101KB 100 ±10 B/Y5P ECKT3D121KB 120 ±10 B/Y5P ECKT3D151KB 150 ±10 B/Y5P ECKT3D181KB 180 ±10 B/Y5P ECKT3D221KB 220 ±10 B/Y5P ECKT3D271KB 270 ±10 B/Y5P ECKT3D331KB 330 ±10 B/Y5P 1 kVDC ECKT3A391KB 390 ±10 B/Y5P ECKT3A471KB 470 ±10 B/Y5P ■ Ratings and Characteristics
• Rated Voltage 1 to 5 kVDC Notes ✽ This part number indicates taped type. ✽ Capacitance 9 pF or under is available by special order. Sep. 2006

Design and specifi cations are each subject to change without notice. Ask factory for the current technical specifi cations before purchase and/or use. Should a safety concern arise regarding this product, please be sure to contact us immediately. High Voltage Ceramic Capacitors (SMD) 500 1000 5000 10 50 100 500 22pF 33pF 47pF 10pF 3000 2000 700 300 200 20 30 70 200 300 Voltage (Vp-p) Frequency (kHZ) 500 1000 5000 10 50 100 500 22pF 33pF 47pF 10pF 3000 2000 700 300 200 20 30 70 200 300 Voltage (Vp-p) Frequency (kHZ) 500 1000 5000 10 50 100 500 22pF 10pF 3000 2000 700 300 200 20 30 70 200 300 Voltage (Vp-p) Frequency (kHZ) –15 –10 +10 –20 0 20 40 60 80 100 120 Capacitance Change (%) Temperature (˚C) Capacitance Change (%) +10 –10 Temperature (˚C) –20 0 20 40 60 80 100 02 0 4 06 08 0 100 120 Permission self generation of heat temperature (˚C) ambient temperature (˚C) 3t o5k V ,1 0t o4 7p F Lamp 2kV,100 to 330 pF 1kV/2kV,100 to 470 pF AC In put DC Out put Type BC or Type FC 1000 to 4700 pF ■ Typical Characteristics

• Temperature Characteristics Char. SL/GP (Temp.Coeff.:+350 to –1000 ppm/°C) Char. B/Y5P Temp.Range:–25 to 85 °C max.Cap.Change:±10 %( )
• Characteristics of Voltage-Frequency Rated Voltage 3 kVDC Rated Voltage 4 kVDC Rated Voltage 5 kVDC ■ Application Examples
• LCD Backlighting Inverter ● Primary circuit and Snubber circuit of Switching Power Supply Permission self gene ration of heat tem per a ture vs. ambient temperature The graphs above show the maximum permissable voltage when using a capacitor with an AC sine wave voltage. When measuring this voltage in room temp erature (25 °C), the capacitor self-heat generation will rise a maximum of 20 °C. When using a pulse voltage or an AC voltage other than a sine wave, confi rm that the capacitor self-heat generation is less than 20 °C in an ambient room temperature of 25 °C. The self-hea t generation temperature is the difference be tween the surface temperature and the ambient room tem perature. As for the situation when the self-heat generation temperature is more than 25 °C, refer to the fi gure on the right. Feb. 2006