ECH8671 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • 1.8V drive.
  • Composite type, facilitating high-density mounting.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -12 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D - -3.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -30 A Allowable Power Dissipation P D When mounted on ceramic substrate (1200mm ×0.8mm) 1unit 1.3 W Total Power Dissipation P T When mounted on ceramic substrate (1200mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -12 V Zero-Gate Voltage Drain Current I DSS VDS=- -12V, VGS=0V - -10 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -6V, ID=- -1mA - -0.4 - -1.3 V Forward Transfer Admittance | yfs | VDS=- -6V, ID=- -1.5A 2.7 4.6 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -1.5A, VGS=- -4.5V 59 77 mΩ RDS(on)2 I D=- -1A, VGS=- -2.5V 90 126 mΩ RDS(on)3 I D=- -0.5A, VGS=- -1.8V 145 215 mΩ Marking : TS Continued on next page. 42209PE MS IM TC-00001907 SANYO Semiconductors DATA SHEET ECH8671 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1456-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Input Capacitance Ciss V DS=- -6V, f=1MHz 330 pF Output Capacitance Coss V DS=- -6V, f=1MHz 110 pF Reverse Transfer Capacitance Crss V DS=- -6V, f=1MHz 88 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 7.1 ns Rise Time tr See speci fi ed Test Circuit. 30 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 31 ns Fall Time tf See specifi ed Test Circuit. 32 ns Total Gate Charge Qg V DS=- -6V, VGS=- -4.5V, ID=- -3.5A 3.9 nC Gate-to-Source Charge Qgs V DS=- -6V, VGS=- -4.5V, ID=- -3.5A 0.6 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -6V, VGS=- -4.5V, ID=- -3.5A 1.1 nC Diode Forward Voltage VSD IS=- -3.5A, VGS=0V - -0.85 - -1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7011A-001 Switching Time Test Circuit 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view PW=10μs D.C.≤1% P. G 50Ω G S D ID= --1.5A RL=4Ω VDD= --6V VOUT VIN --4.5V VIN ECH8671

No. A1456-3/4 IS -- VSD Drain Current, ID -- A Diode Forward V oltage, VSD -- V SW Time -- ID Ciss, Coss, Crss -- VDS Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V RDS(on) -- VGS RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C Source Current, IS -- A ID -- VDS ID -- VGS Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V | yfs | -- ID Forward Transfer Admittance, | yfs | -- S IT14576 IT14577 1.0 0.1 Ta= --25°C VDS= --6V --0.01 --0.1 VGS=0V VDD= --6V VGS= --4.5V td(on) td(off) tf IT14578 0 --6 --10 1000 100 --12--2 --4 --8 Ciss Coss Crss IT14579 100 Ta=75 --25 f=1MHz 120 100 140 180 160 220 200 160 140 120 100 200 180 220 IT14574 IT14575 ID= --0.5A --1.5A Ta=25°C --1A 75°C 25°C 2 --1.0 --60 --40 --20 0 20 40 60 80 100 120 140 160 VGS= --1.8V , I D= --0.5A VGS= --4.5V , ID= --1.5A VGS= --2.5V , ID= --1.0A 35 7 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 IT14572 --1.0 --0.5 --1.5 --2.0 --2.5 --3.0 --3.5 --6.0 --5.5 --5.0 --4.5 --4.0 --25 IT14573 --2.5V --1.5V --1.8V--8V --4.5V Ta=75 VDS= --10V --10V °CVGS= --1.2V --3.5V tr --1035 7 --10

No. A1456-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of April, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ECH8671 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V IT14580 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 VDS= --6V ID= --3A Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A IT14639 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.4 1.3 1.5 0.2 0.6 1.0 1.6 When mounted on ceramic substrate (1200mm2×0.8mm) 1unit Total dissipation --1.0 --10 --0.1 --0.01 23 5 3 2723 5 723 5 7--0.01 --0.1 --1.0 --10 IT14638 100 μs 10ms 100ms Operation in this area is limited by RDS(on). ID= --3.5A DC operation ( Ta=25 °C) IDP= --30A 1ms PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit