ECH8668

ECH8668 SANYO | Alldatasheet

Document overview

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Technical content

Features

• The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.
• 1.8V drive.
• Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage V DSS 20 - -20 V Gate-to-Source Voltage V GSS ±10 ±10 V Drain Current (DC) I D 7.5 - -5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 40 - -40 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1unit 1.3 W Total Dissipation P T When mounted on ceramic substrate (900mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [N-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 20 V Zero-Gate Voltage Drain Current I DSS V DS=20V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 0.5 1.3 V Marking : TP Continued on next page. O2809PE TK IM TC-00002167 SANYO Semiconductors DATA SHEET ECH8668 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

Applications

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No. A1510-2/6 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Forward Transfer Admittance | yfs | VDS=10V, ID=4A 4.2 7 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=4A, VGS=4.5V 13 17 m Ω RDS(on)2 I D=2A, VGS=2.5V 18 26 m Ω RDS(on)3 I D=0.5A, VGS=1.8V 30 48 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 1060 pF Output Capacitance Coss V DS=10V, f=1MHz 180 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 135 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 17.5 ns Rise Time tr See speci fi ed Test Circuit. 120 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 68 ns Fall Time tf See specifi ed Test Circuit. 80 ns Total Gate Charge Qg V DS=10V, VGS=4.5V, ID=7.5A 10.8 nC Gate-to-Source Charge Qgs V DS=10V, VGS=4.5V, ID=7.5A 2.1 nC Gate-to-Drain “Miller” Charge Qgd V DS=10V, VGS=4.5V, ID=7.5A 2.9 nC Diode Forward Voltage VSD IS=7.5A, VGS=0V 0.74 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -20 V Zero-Gate Voltage Drain Current I DSS V DS=- -20V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -0.4 - -1.3 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -3A 4.9 8.3 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -3A, VGS=- -4.5V 29 38 mΩ RDS(on)2 I D=- -1.5A, VGS=- -2.5V 41 58 mΩ RDS(on)3 I D=- -0.5A, VGS=- -1.8V 64 98 mΩ Input Capacitance Ciss V DS=- -10V, f=1MHz 960 pF Output Capacitance Coss V DS=- -10V, f=1MHz 180 pF Reverse Transfer Capacitance Crss V DS=- -10V, f=1MHz 140 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 14 ns Rise Time tr See speci fi ed Test Circuit. 55 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 92 ns Fall Time tf See specifi ed Test Circuit. 68 ns Total Gate Charge Qg V DS=- -10V, VGS=- -4.5V, ID=- -5A 11 nC Gate-to-Source Charge Qgs V DS=- -10V, VGS=- -4.5V, ID=- -5A 2.0 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -10V, VGS=- -4.5V, ID=- -5A 2.8 nC Diode Forward Voltage VSD IS=- -5A, VGS=0V - -0.82 - -1.2 V

No. A1510-3/6 Package Dimensions Electrical Connection unit : mm (typ) 7011A-001 Switching Time Test Circuit [N-channel] [P-channel] 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View 876 5 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view PW=10μs D.C.≤1% P. G 50Ω G S D ID=4A RL=2.5Ω VDD=10V VOUT VIN VIN ECH8668 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --3A RL=3.33Ω VDD= --10V VOUT VIN --4V VIN ECH8668 [Nch][Nch] Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A 1.5 3.5 5.5 2.0 4.0 6.0 6.5 7.0 0.5 2.5 4.5 1.0 3.0 5.0 7.5 IT12483 IT12484 VDS=10V --25 Ta=75 °CVGS=1.5V 2.0V2.5V 4.0V 6.0V 8.0V 3.0V

No. A1510-4/6 | yfs | -- ID Forward Transfer Admittance, | yfs | -- S [Nch][Nch] [Nch][Nch] [Nch][Nch] [Nch][Nch] --60 --40 --20 0 20 40 60 80 100 120 140 160 VGS=2.5V , ID=2A VGS=4.5V , ID=4A VGS=4.0V , I D=4A VGS=3.1V , I D=4A Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Ambient Temperature, Ta -- °C RDS(on) -- Ta SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 1000 IT12485 26 48 1 0 Ta=25°C IT12486 IT12487 IT12488 048 1 2 1 62 6 10 14 18 20 0.01 0.1 1.0 IT12490 0.1 1.0 0.1 20.01 5723 1.0 2573 Ta= --25 75°C 25°C VDS=10V --25 Ta=75 VGS=0V Ciss Coss Crss f=1MHz 10573 ID=2A 100 1000 0.1 2 1.035 7 IT12489 VDD=10V VGS=4V td(off) tr tf 1023 5 7 td(on) A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg 0123456789 1 0 1 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 IT12491 IT14781 VDS=10V ID=7.5A 0.1 1.0 0.01 0.01 0.1 5723 2 1.05732 105732 3 5 Operation in this area is limited by RDS(on). 100μs 100msDC operation (Ta= 25°C) 10ms 1ms2 IDP=40A ID=7.5A Ta=25°C Single pulse When mounted on ceramic substrate (900mm 2×0.8mm) PW≤10μs

No. A1510-5/6 | yfs | -- ID Forward Transfer Admittance, | yfs | -- S [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A 100 1000 100 1000 IT13074 --1 --4 --7 --2 --5 --3 --6 --8 --25 Ta=75 IT13076 --60 --40 --20 0 20 40 80 120 60 100 140 160 100 IT13079 IT13077 IT13078 --0.01 --0.1 IT13080 0.1 1.0 Ta= --25 75°C 25°C VDS= --10V --25 Ta=75 VGS=0V VDD= --10V VGS= --4V td(off) td(on) tr tf Ciss Coss Crss f=1MHz --1023 5 7 VGS= --1.8V , ID= --0.5A VGS= --2.5V , ID= --1.5A VGS= --4.5V , ID= --3.0A --1.0 --10 IT13075 --2 --4 --1 --3 --5 IT13073 100 120 140 VGS= --1.2V --1.8V Ta=25°C --2.0V--8.0V--2.5V --4.5V ID= --0.5A --3.0A --1.5A --1.5V VGS= --10V

No. A1510-6/6 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of October, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ECH8668 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. IT13083 PD -- Ta Allowable Power Dissipation, PD -- W 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 1.5 1.3 1unit Total Dissipation When mounted on ceramic substrate (900mm2×0.8mm) Ambient Temperature, Ta -- °C [Pch] [Nch/Pch] [Pch] A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V 012345678 1 0 91 1 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 IT13081 IT13082 VDS= --10V ID= --5A --0.1 --1.0 --0.01 Operation in this area is limited by RDS(on). 100msDC operation (Ta=25 °C) 10ms 1ms IDP= --40A ID= --5A --10 --100 --10573 100 μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm 2×0.8mm) PW≤10μs