ECH8663R SANYO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Built-in gate protection resistor.
  • 2.5V drive.
  • Best suited for LiB charging and discharging switch.
  • Common-drain type.
  • Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±12 V Drain Current (DC) I D 8A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.4 W Total Dissipation P T When mounted on ceramic substrate (900mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS VDS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 0.5 1.3 V Forward Transfer Admittance ⏐yfs⏐ VDS=10V, ID=4A 5 8.5 S Marking : TJ Continued on next page.

No. A1184-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit RDS(on)1 I D=4A, VGS=4.5V 10.5 15.5 20.5 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 I D=4A, VGS=4.0V 11 16 21 m Ω RDS(on)3 I D=2A, VGS=3.1V 12 17.5 23 m Ω RDS(on)4 I D=2A, VGS=2.5V 12 20 28 m Ω Turn-ON Delay Time t d(on) See specified Test Circuit. 320 ns Rise Time t r See specified Test Circuit. 850 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 4200 ns Fall Time t f See specified Test Circuit. 1800 ns Total Gate Charge Qg V DS=10V, VGS=4.5V, ID=8A 12.3 nC Gate-to-Source Charge Qgs V DS=10V, VGS=4.5V, ID=8A 2.4 nC Gate-to-Drain “Miller” Charge Qgd V DS=10V, VGS=4.5V, ID=8A 2.8 nC Diode Forward Voltage V SD IS=8A, VGS=0V 0.75 1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7011A-003 Switching Time Test Circuit PW=10μs D.C.≤1% P.G 50Ω G S D ID=4A RL=3.75Ω VDD=15V VOUT ECH8663R VIN 4.5V VIN Rg Rg=1kΩ 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View

No. A1184-3/4 Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A Forward Transfer Admittance, ⏐yfs⏐ -- S ⏐yfs⏐ -- ID Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IT13613 26 48 1 0 100 IT13614 IT13615 IT13616 0.001 0.01 0.1 1.0 1.0 0.1 5723 1.0 2 Ta= --25°C 75°C 25°C VDS=10V --25 Ta=7 5°C VGS=0V 10573 IT13612 --25 Ta=75 VDS=10V Ta=25°C ID=1.5A 3.0A SW Time -- ID VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Switching Time, SW Time -- ns Drain Current, ID -- A 1000 10000 0.01 2 0.1 1.035 7 2 35 7 IT13680 VDD=10V VGS=4.5Vtd(off) td(on) tr tf 1023 5 7 01 3 5 7 9 2 4 6 8 10 11 12 13 0.5 1.5 2.5 3.5 1.0 2.0 3.0 4.0 4.5 IT13681 VDS=10V ID=8A Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A IT13806 VGS=1.5V 2.5V 4.0V 10.0V 3.1V4.5V --60 --20--40 0 60 4020 100 80 120 140 160 VGS=3.1V , I D=1.5A VGS=2.5V , I D=1.5A VGS=4.0V , ID=3.0A VGS=4.5V , I D=3.0A

No. A1184-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS Note on usage : Since the ECH8663R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT13683 20 40 0.4 60 80 100 120 140 160 1.0 1.4 1.5 1.6 0.2 0.8 0.6 1.2 1unit Total Dissipation When mounted on ceramic substrate (900mm2✕0.8mm) IT13682 0.1 1.0 0.01 0.01 0.1 5723 2 1.05732 105733 25 Operation in this area is limited by RDS(on). PW≤10μs 100 μs 100ms DC operation 10m s 1ms2

100 IDP=60A

ID=8A A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse When mounted on ceramic substrate (900mm 2✕0.8mm) 1unit