ECH8660

ECH8660 SANYO | Alldatasheet

Document overview

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Technical content

Features

• The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.
• 4V drive.
• Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage V DSS 30 - -30 V Gate-to-Source Voltage V GSS ±20 ±20 V Drain Current (DC) I D 4.5 - -4.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 30 - -30 A Allowable Power Dissipation P D When mounted on ceramic substrate (1200mm ×0.8mm) 1unit 1.3 W Total Dissipation P T When mounted on ceramic substrate (1200mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [N-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Marking : TF Continued on next page. N1908PE MS IM TC-00001695 SANYO Semiconductors DATA SHEET ECH8660 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

Applications

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No. A1358-2/6 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Forward Transfer Admittance | yfs | VDS=10V, ID=2A 1 1.66 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=2A, VGS=10V 45 59 m Ω RDS(on)2 I D=1A, VGS=4.5V 85 119 m Ω RDS(on)3 I D=1A, VGS=4V 110 155 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 240 pF Output Capacitance Coss V DS=10V, f=1MHz 45 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 30 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 6.2 ns Rise Time tr See speci fi ed Test Circuit. 11 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 17 ns Fall Time tf See specifi ed Test Circuit. 7.5 ns Total Gate Charge Qg V DS=10V, VGS=10V, ID=4.5A 4.4 nC Gate-to-Source Charge Qgs V DS=10V, VGS=10V, ID=4.5A 1.1 nC Gate-to-Drain “Miller” Charge Qgd V DS=10V, VGS=10V, ID=4.5A 0.64 nC Diode Forward Voltage VSD IS=4.5A, VGS=0V 0.84 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -30 V Zero-Gate Voltage Drain Current I DSS V DS=- -30V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.3 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -2A 2.5 4.2 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -2A, VGS=- -10V 45 59 mΩ RDS(on)2 I D=- -1A, VGS=- -4.5V 71 100 mΩ RDS(on)3 I D=- -1A, VGS=- -4V 82 115 mΩ Input Capacitance Ciss V DS=- -10V, f=1MHz 430 pF Output Capacitance Coss V DS=- -10V, f=1MHz 105 pF Reverse Transfer Capacitance Crss V DS=- -10V, f=1MHz 75 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 7.5 ns Rise Time tr See speci fi ed Test Circuit. 26 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 45 ns Fall Time tf See specifi ed Test Circuit. 35 ns Total Gate Charge Qg V DS=- -10V, VGS=- -10V, ID=- -4.5A 10 nC Gate-to-Source Charge Qgs V DS=- -10V, VGS=- -10V, ID=- -4.5A 2.0 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -10V, VGS=- -10V, ID=- -4.5A 2.5 nC Diode Forward Voltage VSD IS=- -4.5A, VGS=0V - -0.85 - -1.2 V

No. A1358-3/6 Package Dimensions Electrical Connection unit : mm (typ) 7011A-001 Switching Time Test Circuit [N-channel] [P-channel] 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View 876 5 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view PW=10μs D.C.≤1% P. G 50Ω G S D ID=2A RL=7.5Ω VDD=15V VOUT VIN 10V VIN ECH8660 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --2A RL=7.5Ω VDD= --15V VOUT VIN --10V VIN ECH8660 ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A [Nch][Nch] 1.5 0.5 2.5 3.0 1.0 2.0 3.5 4.0 IT14210 IT14211 VDS=10V --25 Ta=75 VGS=3.0V 3.5V 4.0V 4.5V15.0V 6.0V10.0V

No. A1358-4/6 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A 0.1 1.0 0.01 0.1 2 1.05732 105732 3 5 Operation in this area is limited by RDS(on). 100msDC operation (Ta=25° 10ms IDP=30A ID=4.5A 100μs1ms [Nch][Nch] [Nch][Nch] [Nch][Nch] [Nch][Nch] PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (1200mm 2×0.8mm) IT14195 0.01 0.1 1.0 --60 --40 --20 0 20 40 60 80 100 120 140 160 160 200 120 VGS=4.0V , ID=1A VGS=10.0V , ID=2A VGS=4.5V , ID=1A IT14212 Ta=25°C IT14213 IT14214 IT14215 Ta= --25 75°C 25°C VDS=10V --25 Ta=75 VGS=0V 1.0 0.1 2 1.035 7 IT14216 VDD=15V VGS=10V td(off) tr tf 1023 5 7 td(on) ID=1A 0 2 10 12 8641 4 1 6 160 120 240 200 0.1 1.0 20.01 0.1 25732 1.05735 7 3 100 3051 5 2 0 2 510 IT14217 f=1MHz Ciss Coss Crss 012345 IT14218 VDS=10V ID=4.5A

No. A1358-5/6 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF --0.01 --0.1 --1.0 --10 --60 --40 --20 0 20 40 60 80 100 120 140 160 100 140 160 120 VGS= --4.0V, ID= --1A VGS= --10.0V , ID= --2A VGS= --4.5V , I D= --1A IT14188 Ta=25°C IT14189 IT14190 IT14191 Ta= --25 75°C 25°C VDS= --10V --25 Ta=75 VGS=0V 100 --0.1 2 --1.035 7 IT14192 VDD= --15V VGS= --10V td(off) tr tf --1023 5 7 td(on) ID= --1A --2A 140 120 100 180 160 0.01 0.1 1.0 100 1000 IT14193 f=1MHz Ciss Coss Crss [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A --1.5 --0.5 --2.5 --3.0 --1.0 --2.0 --3.5 --4.0 IT14186 IT14187 --1 --4 --2 --5 --3 --6 VDS= --10V --25 Ta=75 VGS= --2.5V --3.0V --3.5V --4.0V --10.0V --4.5V --6.0V

No. A1358-6/6 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of November, 2008. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. IT14197 IT14196 PD -- Ta Allowable Power Dissipation, PD -- W 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 1.5 1.3 1unit Total Dissipation When mounted on ceramic substrate (1200mm2×0.8mm) Ambient Temperature, Ta -- °C A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A --0.1 --1.0 --0.01 Operation in this area is limited by RDS(on). 100msDC operation (Ta=25° 10ms --10 IDP= --30A ID= --4.5A 100μs1ms [Pch] [Nch/Pch] PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (1200mm 2×0.8mm) Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V [Pch] 01234 6 8 57 1 0 91 1 --1 --2 --3 --4 --5 --6 --7 --8 --10 --9 IT14194 VDS= --10V ID= --4.5A