ECH8659 SANYO | Alldatasheet

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Technical content

Features

  • 4V drive.
  • Composite type, facilitating high-density mounting.
  • Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 7A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 40 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.3 W Total Dissipation P T When mounted on ceramic substrate (900mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS VDS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance ⏐yfs⏐ VDS=10V, ID=3.5A 2.2 3.7 S Marking : TE Continued on next page.

No. A1224-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit RDS(on)1 I D=3.5A, VGS=10V 18 24 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 I D=2A, VGS=4.5V 29 41 m Ω RDS(on)3 I D=2A, VGS=4V 39 55 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 710 pF Output Capacitance Coss V DS=10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 72 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 10 ns Rise Time t r See specified Test Circuit. 25 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 43 ns Fall Time t f See specified Test Circuit. 25 ns Total Gate Charge Qg V DS=15V, VGS=10V, ID=3.5A 11.8 nC Gate-to-Source Charge Qgs V DS=15V, VGS=10V, ID=3.5A 2.4 nC Gate-to-Drain “Miller” Charge Qgd V DS=15V, VGS=10V, ID=3.5A 2.0 nC Diode Forward Voltage V SD IS=7A, VGS=0V 0.79 1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7011A-001 Switching Time Test Circuit PW=10μs D.C.≤1% P.G 50Ω G S D ID=3.5A RL=4.3Ω VDD=15V VOUT ECH8659 VIN 10V VIN 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View

No. A1224-3/4 Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Forward Transfer Admittance, ⏐yfs⏐ -- S ⏐yfs⏐ -- ID Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 1000 100 IT13725 IT13723 IT13724 1061 428 41 2 1 6 VDS=10V --25 Ta=75 °CVGS=3.0V 3.5V4.0V Ta=25°C IT13726 --60 --40 --20 0 20 40 60 80 100 120 140 160 0.1 2 1.0 1035 7 IT13729 IT13727 IT13728 0 5 10 25 15 20 30 0.01 0.1 1.0 IT13730 0.1 1.0 0.1 20.01 5723 1.0 22573 Ta= --25°C 75°C 25°C VDS=10V --25 Ta=7 5°C VGS=0V VDD=15V VGS=10V td(off) tr tf Ciss Coss Crss f=1MHz 8.0V 10.0V 16.0V 10573 22 33 57 VGS=4.5V , ID=2.0A VGS=10.0V , ID=3.5A td(on) VGS=4.0V , ID=2.0A 4.5V6.0V ID=2A 3.5A

No. A1224-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg 20 40 0.4 60 80 100 120 140 160 IT13733 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 1.5 1.3 1unit Total Dissipation 0123456789 1 0 1 1 1 2 IT13731 IT13732 VDS=15V ID=3.5A 0.1 1.0 0.01 0.01 0.1 5723 2 1.05732 105732 3 5 Operation in this area is limited by RDS(on). 100 μs 100ms DC operation 10ms 1ms2 100 IDP=40A ID=7A PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice.