ECH8654 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • 1.8V drive.
  • Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -20 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D -- 5 A Drain Current (Pulse) I DP PW≤10µs, duty cycle≤1% - -40 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.3 W Total Power Dissipation P T Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -20 V Zero-Gate Voltage Drain Current I DSS VDS=- -20V, VGS=0V - -1 µA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 µA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -0.4 - -1.3 V Forward Transfer Admittance ⏐yfs⏐ VDS=- -10V, ID=- -3A 4.9 8.3 S RDS(on)1 I D=- -3A, VGS=- -4.5V 29 38 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 I D=- -1.5A, VGS=- -2.5V 41 58 m Ω RDS(on)3 I D=- -0.5A, VGS=- -1.8V 64 98 m Ω Marking : WZ Continued on next page.

No. A0981-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS=- -10V, f=1MHz 960 pF Output Capacitance Coss V DS=- -10V, f=1MHz 180 pF Reverse Transfer Capacitance Crss V DS=- -10V, f=1MHz 140 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 14 ns Rise Time t r See specified Test Circuit. 55 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 92 ns Fall Time t f See specified Test Circuit. 68 ns Total Gate Charge Qg V DS=- -10V, VGS=- -4.5V, ID=- -5A 11 nC Gate-to-Source Charge Qgs V DS=- -10V, VGS=- -4.5V, ID=- -5A 2.0 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -10V, VGS=- -4.5V, ID=- -5A 2.8 nC Diode Forward Voltage V SD IS=- -5A, VGS=0V - -0.82 - -1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7011A-001 Switching Time Test Circuit PW=10µs D.C.≤1% P.G 50Ω G S D ID= --3A RL=3.33Ω VDD= --10V VOUT ECH8654 VIN --4V VIN 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view

No. A0981-3/4 Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Forward Transfer Admittance, ⏐yfs⏐ -- S ⏐yfs⏐ -- ID Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A 100 1000 100 1000 IT13074 --1 --4 --7 --2 --5 --3 --6 --8 --25 Ta=75 IT13076 --60 --40 --20 0 20 40 80 120 60 100 140 160 100 IT13079 IT13077 IT13078 --0.01 --0.1 IT13080 0.1 1.0 Ta= --25°C 75°C 25°C VDS= --10V --25 Ta=7 5°C VGS=0V VDD= --10V VGS= --4V td(off) td(on) tr tf Ciss Coss Crss f=1MHz --1023 5 7 VGS= --1.8V , ID= --0.5A VGS= --2.5V , ID= --1.5A VGS= --4.5V , ID= --3.0A --1.0 --10 IT13075 --2 --4 --1 --3 --5 IT13073 100 120 140 VGS= --1.2V --1.8V Ta=25°C --2.0V--8.0V--2.5V --4.5V ID= --0.5A --3.0A --1.5A --1.5V VGS= --10V

No. A0981-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS Note on usage : Since the ECH8654 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT13083 20 40 0.4 60 80 100 120 140 160 1.0 1.4 1.5 1.3 1.8 0.2 0.8 0.6 1.2 1.6 1unit Mounted on a ceramic board (900mm2✕0.8mm) Total Dissipation 012345678 1 0 91 1 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 IT13081 IT13082 VDS= --10V ID= --5A --0.1 --1.0 --0.01 Operation in this area is limited by RDS(on). 100msDC operation(Ta=25 °C) 10ms 1ms IDP= --40A ID= --5A --10 --100 --10573 100 µs Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit PW≤10µs This catalog provides information as of November, 2007. Specifications and information herein are subject to change without notice.