ECH8653

ECH8653 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low ON-resistance.
• 4V drive.
• Best suited for LiB charging and discharging switch.
• Common-drain type.
• Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 20 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 7.5 A Drain Current (Pulse) I DP PW≤10µs, duty cycle≤1% 40 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.4 W Total Dissipation P T Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 20 V Zero-Gate Voltage Drain Current I DSS VDS=20V, VGS=0V 1 µA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 µA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.0 2.4 V Forward Transfer Admittance yfs VDS=10V, ID=4A 3.4 5.8 S Marking : WY Continued on next page.

No. A0851-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Static Drain-to-Source On-State Resistance RDS(on)1 I D=4A, VGS=8V 9 14 20 m Ω RDS(on)2 I D=4A, VGS=4V 11 18 25 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 1280 pF Output Capacitance Coss V DS=10V, f=1MHz 170 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 105 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 13 ns Rise Time t r See specified Test Circuit. 48 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 94 ns Fall Time t f See specified Test Circuit. 36 ns Total Gate Charge Qg V DS=10V, VGS=8V, ID=7.5A 18.5 nC Gate-to-Source Charge Qgs V DS=10V, VGS=8V, ID=7.5A 2.7 nC Gate-to-Drain “Miller” Charge Qgd V DS=10V, VGS=8V, ID=7.5A 3.1 nC Diode Forward Voltage V SD IS=7.5A, VGS=0V 0.82 1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7011A-003 Switching Time Test Circuit PW=10µs D.C.≤1% P. G 50Ω G S D ID=4A RL=2.5Ω VDD=10V VOUT ECH8653 VIN VIN 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View

No. A0851-3/4 --60 -- 40 --20 0 20 40 80 120 60 100 140 160 V GS =4V , ID=4A V GS =8V , ID =4A Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Forward Transfer Admittance, yfs -- S yfs -- ID Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ 100 1000 1.0 100 1000 IT12473 1.5 3.5 5.5 2.0 4.0 6.0 6.5 7.0 0.5 2.5 4.5 1.0 3.0 5.0 7.5 IT12471 IT12472 26 48 1 0 V DS =10V --25 Ta=75 V GS =2.0V 2.5V3.0V Ta=25°C ID =4A IT12474 0.10.01 23 5 7 2 1.035 7 2 IT12477 IT12475 IT12476 048 1 2 1626 1 0 14 18 20 0.01 0.1 1.0 IT12478 0.1 1.0 0.1 20.01 5723 1.0 2573 Ta= --25°C 75°C 25°C V DS =10V --25 Ta=7 5°C V GS =0V V DD =10V V GS =8V td(off) td(on) tr tf Ciss Coss Crss f=1MHz 5.0V 4.0V6.0V 8.0V 10573 1023 5 7

No. A0851-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS 02468 1 0 1 2 1 41 61 82 0 IT12479 IT12480 IT12481 V DS =10V ID =7.5A 0.1 1.0 20 40 0.4 60 80 100 120 140 160 1.0 1.4 1.5 1.8 0.2 0.8 0.6 1.2 1.6 0.01 0.01 0.1 5723 2 1.05732 105732 3 5 Operation in this area is limited by RDS (on). PW ≤10µs 100µs 100msDC operation (Ta=25 °C) 10ms 1ms2 IDP =40A ID =7.5A 1unit A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Total Dissipation Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg Note on usage : Since the ECH8653 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice.