ECH8616 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Ultrahigh-speed switching.
  • 4V drive.
  • Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 3A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 20 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 1unit 1.3 W Total Dissipation P T Mounted on a ceramic board (900mm25 0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =1.5A 2.2 3.8 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =1.5A, VGS =10V 70 93 m Ω R DS (on)2 I D =0.5A, VGS =4V 92 133 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 560 pF Output Capacitance Coss V DS =20V, f=1MHz 60 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 41 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 11 ns Rise Time t r See specified Test Circuit. 11 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 61 ns Fall Time t f See specified Test Circuit. 32 ns Marking : FJ Continued on next page.

No.8191-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =30V, VGS =10V, ID =3A 12.8 nC Gate-to-Source Charge Qgs V DS =30V, VGS =10V, ID =3A 2.1 nC Gate-to-Drain “Miller” Charge Qgd V DS =30V, VGS =10V, ID =3A 2.7 nC Diode Forward Voltage V SD IS=3A, VGS =0 0.81 1.2 V Package Dimensions Electrical Connection unit : mm 2206B Switching Time Test Circuit PW=10 µs D.C.≤1% P.G 50Ω G S D ID =1.5A R L=20Ω VDD =30V VOUT ECH8616 VIN 10V VIN 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 0.15 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07

No.8191-3/4 Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A Ambient Temperature, Ta -- °C R DS (on) -- Ta Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Forward Transfer Admittance, yfs -- S yfs -- ID Diode Forward V oltage, VSD -- V Forward Current, IF -- A IF -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ 1000 100 1.0 100 1000 IT08981 IT08979 IT08980 0.5 1.0 1.5 2.0 2.5 3.0 2 4 6 8 10 100 120 140 160 180 200 V DS =10V --25 Ta=75 V GS =2.5V 3.0V 4.0V 10V Ta=25°C ID =0.5A 1.5A IT08982 --60 --40 --20 0 20 40 60 80 100 120 140 160 100 120 140 160 180 200 0.10.01 23 5 7 1.023 5 7 1023 5 7 IT08985 IT08983 IT08984 0 5 10 15 20 25 30 0.001 0.01 0.1 1.0 IT08986 0.01 1.0 0.1 0.01 0.1 57230.001 5723 1.05723 105723 Ta= --25 75°C 25°C V DS =10V --25 Ta=7 5°C V GS =0 V DD =30V V GS =10V td(off) td(on) tr tf Ciss Coss Crss f=1MHz ID=0.5A, V GS=4V ID=1.5A, V GS=10V 8.0V 6.0V 5.0V

No.8191-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W 1.0 0.1 0123456789 1 0 1 1 1 2 1 3 20 40 0.4 60 80 100 120 140 160 IT08989 0.8 1.2 1.3 1.6 0.2 0.6 1.0 1.4 1.5 V DS =30V ID =3A IT08987 IT08988 0.01 0.01 0.1 5723 1.05723 105723 1005723 Operation in this area is limited by RDS (on). IDP =20A ID =3A 100 µs 100msDC operation(Ta=25 °C) 10ms 1ms 1unit Total Dissipation Mounted on a ceramic board (900mm 25 0.8mm) <10µs Ta=25°C Single pulse Mounted on a ceramic board (900mm25 0.8mm) 1unit Note on usage : Since the ECH8616 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.