ECH8420-TL-H

ECH8420_12 SANYO | Alldatasheet

Document overview

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Technical content

Features

• ON-resistance R DS(on)1=5.2mΩ (typ.)
• 1.8V drive.
• Halogen free compliance.
• Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 20 V Gate-to-Source Voltage V GSS ±12 V Drain Current (DC) I D 14 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 50 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-002

71112 TKIM/O1911PE TKIM TC-00002660

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network SANYO Semiconductors DATA SHEET 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View 876 5 123 4 Product & Package Information

• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection TL ECH8420-TL-H ZA Lot No.

No.8993-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 20 V Zero-Gate Voltage Drain Current I DSS V DS=20V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 0.4 1.3 V Forward Transfer Admittance | yfs | VDS=10V, ID=7A 14.5 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=7A, VGS=4.5V 5.2 6.8 m Ω RDS(on)2 I D=4A, VGS=2.5V 8 11.5 m Ω RDS(on)3 I D=2A, VGS=1.8V 15 22.5 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 2430 pF Output Capacitance Coss 410 pF Reverse Transfer Capacitance Crss 330 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 21 ns Rise Time tr 88 ns Turn-OFF Delay Time td(off) 210 ns Fall Time tf 115 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=14A 29 nC Gate-to-Source Charge Qgs 4.8 nC Gate-to-Drain “Miller” Charge Qgd 8.7 nC Diode Forward Voltage VSD IS=14A, VGS=0V 0.75 1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ECH8420-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID=7A RL=1.43Ω VDD=10V VOUT ECH8420 VIN 4.5V VIN

No.8993-3/7 ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V IT16531 --25 °C25 Ta=75 VDS=10V Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A IT16625 VGS=1.5V 4.5V 10.0V 1.8V 2.5V 6.0V 8.0V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- Ta IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A 100 1000 10000 202 4 6 8 12 14 16 18 10 IT16537IT16536 IT16535 0.001 0.0175 0.175 IT16534 --25 f=1MHz Ciss Coss Crss Ta=75 0.01 0.1 223 5 7 1.0 235 7 2 1035 7 0.1 1.0 100 VDS=10V Ta= --25 75°C VGS=0V 100 1000 0.1 1.0 223 5 7 1035 7 2 10035 7 VDD=15V VGS=10V td(off) tf td(on) tr IT16533 --50 0 50 100 150 200 VGS=2.5V , ID=4A VGS=1.8V , ID=2A VGS=4.5V , ID=7A 10035 7 25°C 1.0 100 1.075 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- VGS IT16532 122468 1 0 Ta=25°C ID=2A

No.8993-4/7 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT16538 30205 4.5 4.0 3.5 3.0 2.5 2.0 1.5 0.5 1.0 251510 0.01 0.1 1.0 23 5 723 5 723 5 7 23 5 10 100 7 0.01 0.1 1.0 100 IDP=50A (PW≤10μs) ID=14A 100ms 1ms 10ms Operation in this area is limited by RDS(on). DC operation (Ta=25 °C) IT16539 VDS=10V ID=14A Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) A S O Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT16540 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 When mounted on ceramic substrate (900mm2×0.8mm)

No.8993-5/7 Embossed Taping Specifi cation ECH8420-TL-H

No.8993-6/7 Outline Drawing Land Pattern Example ECH8420-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65

No.8993-7/7PS This catalog provides information as of July, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ECH8420 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.