ECH8410 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • 4V drive.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 12 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm ×0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=6A 7.5 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=6A, VGS=10V 7.5 10 m Ω RDS(on)2 I D=3A, VGS=4.5V 13 18.2 m Ω RDS(on)3 I D=3A, VGS=4V 15.5 22 m Ω Marking : KQ Continued on next page. N2509PE TK IM TC-00002188 SANYO Semiconductors DATA SHEET ECH8410 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1331-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Input Capacitance Ciss V DS=10V, f=1MHz 1700 pF Output Capacitance Coss V DS=10V, f=1MHz 300 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 200 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 17 ns Rise Time tr See speci fi ed Test Circuit. 50 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 110 ns Fall Time tf See specifi ed Test Circuit. 72 ns Total Gate Charge Qg V DS=15V, VGS=10V, ID=12A 31 nC Gate-to-Source Charge Qgs V DS=15V, VGS=10V, ID=12A 5.5 nC Gate-to-Drain “Miller” Charge Qgd V DS=15V, VGS=10V, ID=12A 5.5 nC Diode Forward Voltage VSD IS=12A, VGS=0V 0.8 1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7011A-002 Switching Time Test Circuit PW=10μs D.C.≤1% 10V VIN P. G 50Ω G S ID=6A RL=2.5Ω VDD=15V VOUTVIN D ECH8410 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View 876 5 123 4 Top view 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain

No. A1331-3/4 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF 0.001 0.1 0.01 1.0 --50 0 50 100 150 200 VGS=4.0V , ID=3A VGS=10.0V , ID=6A VGS=4.5V , ID=3A IT14584 IT14583 VDS=10V --25 Ta=75 Ta=25°C IT14585 IT14586 IT14587 Ta= --25 75°C 25°C VDS=10V --25 Ta=75 VGS=0V 0 2 10 14 8641 8 12 16 0.1 1.0 0.10.01 5723 5 7 23 5 7 23 231.0 10 100 0.1 2 1.035 7 2 3 2 3 57 IT14588 VDD=15V VGS=10V td(off) tr tf td(on) 1000 100 3051 5 2 0 2 510 IT14589 f=1MHz Ciss Coss Crss ID=3A Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A IT15056 VGS=3.0V 4.0V 10.0V 8.0V 6.0V 4.5V

No. A1331-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of November, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ECH8410 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A PD -- Ta Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C IT15057 0.1 1.0 0.01 0.01 2 1.05732 0.15732 105732 5 3 Operation in this area is limited by RDS(on). 100msDC operation (Ta=25 °C) 10ms

100 IDP=60A

ID=12A 1ms 100 μs IT14986 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.8 1.6 0.2 0.6 1.0 1.4 PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) When mounted on ceramic substrate (900mm2×0.8mm) Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V 0 5 10 15 20 35 3025 IT14590 VDS=15V ID=12A