DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Low ON-resistance
  • 1.8V drive
  • Halogen free compliance
  • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -20 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D - -9.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -40 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-002

52312 TKIM/52009PE MSIM TC-00001972

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : ECH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection ECH8320 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View TL ECH8320-TL-H YA Lot No.

No. A1429-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -20 V Zero-Gate Voltage Drain Current I DSS V DS=- -20V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -0.4 - -1.3 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -5A 16 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -5A, VGS=- -4.5V 11 14.5 mΩ RDS(on)2 I D=- -3A, VGS=- -2.5V 16 23 mΩ RDS(on)3 I D=- -1A, VGS=- -1.8V 25 39 mΩ Input Capacitance Ciss V DS=- -10V, f=1MHz 2300 pF Output Capacitance Coss V DS=- -10V, f=1MHz 440 pF Reverse Transfer Capacitance Crss V DS=- -10V, f=1MHz 340 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 24 ns Rise Time tr See speci fi ed Test Circuit. 100 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 230 ns Fall Time tf See specifi ed Test Circuit. 163 ns Total Gate Charge Qg V DS=- -10V, VGS=- -4.5V, ID=- -9.5A 25 nC Gate-to-Source Charge Qgs V DS=- -10V, VGS=- -4.5V, ID=- -9.5A 3.6 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -10V, VGS=- -4.5V, ID=- -9.5A 7.6 nC Diode Forward Voltage VSD IS=- -9.5A, VGS=0V - -0.79 - -1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ECH8320-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID= --5A RL=2Ω VDD= --10V VOUT VIN --4.5V VIN ECH8320

No. A1429-3/7 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF --0.001 --0.01 --0.1 --1.0 --10 --60 --40 --20 0 20 40 60 80 100 120 140 160 25 VGS= --1.8V , I D= --1A VGS= --4.5V , ID= --5A VGS= --2.5V , I D= --3A IT14460 Ta=25°C IT14461 IT14462 IT14463 Ta= --25 75°C 25°C VDS= --10V --25 Ta=75 VGS=0V 100 1000 IT14464 VDD= --10V VGS= --4.5V td(off) tr tf 22 33 57 td(on) ID= --1A --5A 0.1 1.0 1000 100 IT14465 f=1MHz Ciss Coss Crss --3A ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A --2 --4 --6 --5 --1 --3 --8 --7 --10 --9 IT14458 IT14459 --9 --3 --12 --6 --15 VDS= --10V --25 Ta=75 VGS= --1.2V --1.5V --1.8V --8.0V--3.5V --4.5V --2.5V

No. A1429-4/7 PD -- Ta Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C IT14468 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 When mounted on ceramic substrate (900mm2×0.8mm) A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT14467 --0.1 --1.0 --0.01 Operation in this area is limited by RDS(on). 100msDC operation (Ta=25 °C) 10ms --10 --100 IDP= --40A ID= --9.5A 100 μs1ms 0 2 4 6 10 18 14 24 2281 6 12 20 26 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.5 --4.0 IT14466 VDS= --10V ID= --9.5A PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm)

No. A1429-5/7 Embossed Taping Specifi cation ECH8320-TL-H

No. A1429-6/7 Outline Drawing Land Pattern Example ECH8320-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65

PS No. A1429-7/7 This catalog provides information as of May, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ECH8320 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.