ECH8310_12 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • 4V drive
  • Halogen free compliance
  • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D -- 9 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -60 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-002

60612 TKIM/O1409PE TK IM TC-00002092

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : ECH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection JM Lot No. TL SANYO Semiconductors DATA SHEET 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View ECH8310-TL-H 876 5 123 4

No. A1430-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -30 V Zero-Gate Voltage Drain Current I DSS V DS=- -30V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -4.5A 12 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -4.5A, VGS=- -10V 9 13 17 mΩ RDS(on)2 I D=- -2A, VGS=- -4.5V 12 20 28 mΩ RDS(on)3 I D=- -2A, VGS=- -4.0V 13.5 23 32.5 mΩ Input Capacitance Ciss VDS=- -10V, f=1MHz 1400 pF Output Capacitance Coss 350 pF Reverse Transfer Capacitance Crss 250 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 10 ns Rise Time tr 45 ns Turn-OFF Delay Time td(off) 134 ns Fall Time tf 87 ns Total Gate Charge Qg VDS=- -15V, VGS=- -10V, ID=- -9A 28 nC Gate-to-Source Charge Qgs 4n C Gate-to-Drain “Miller” Charge Qgd 6n C Diode Forward Voltage VSD IS=- -9A, VGS=0V - -0.8 - -1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ECH8310-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID= --4.5A RL=3.3Ω VDD= --15V VOUT VIN --10V VIN ECH8310

No. A1430-3/7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Gate-to-Source V oltage, VGS -- V IT14478 --3 --1 --4 --2 --7 --5 --8 --6 --9 VDS= --10V --25 Ta=75 --0.001 --0.01 --0.1 --1.0 --10 IT14479 Ta=25°C IT14480 IT14481 IT14482 Ta= --25 75°C 25°C VDS= --10V --25 Ta=75 VGS=0V 100 IT14483 VDD= --15V VGS= --10Vtd(off) tr tf td(on) ID= --2A --4.5A 0.1 1.0 1000 100 IT14484 f=1MHz Ciss Coss Crss --60 --40 --20 0 40 60 80 20 140 120100 160 VGS= --4.0V , I D= --2.0A VGS= --10.0V , ID= --4.5AVGS= --4.5V , I D= --2.0A Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A IT15075 --9 --4 --3 --8 --7 --6 --5 --1 --2 --10.0V --4.0V VGS= --2.5V --3.5V --6.0V --8.0V --4.5V

No. A1430-4/7 PD -- Ta Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C IT14486 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.5 1.8 0.2 0.6 1.0 1.4 When mounted on ceramic substrate (900mm2×0.8mm) A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A IT14500 --0.1 --1.0 --0.01 Operation in this area is limited by RDS(on). 100msDC operation (Ta=25 °C) 10ms --10 --100 IDP= --60A ID= --9A 1ms Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) PW≤10μs 0 5 10 20 15 25 30 --2 --4 --6 --8 --10 IT14485 VDS= --15V ID= --9A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V

No. A1430-5/7 Embossed Taping Specifi cation ECH8310-TL-H

No. A1430-6/7 Outline Drawing Land Pattern Example ECH8310-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65

No. A1430-7/7PS This catalog provides information as of June, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ECH8310 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.