ECH8309

ECH8309 SANYO | Alldatasheet

Document overview

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Technical content

Features

• 1.8V drive.
• Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -12 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D - -9.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -40 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -12 V Zero-Gate Voltage Drain Current I DSS V DS=- -12V, VGS=0V - -10 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -6V, ID=- -1mA - -0.4 - -1.3 V Forward Transfer Admittance | yfs | VDS=- -6V, ID=- -4.5A 9.6 16 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -4.5A, VGS=- -4.5V 12 16 mΩ RDS(on)2 I D=- -2A, VGS=- -2.5V 18 26 mΩ RDS(on)3 I D=- -1A, VGS=- -1.8V 30 53 mΩ Marking : JL Continued on next page. 22509PE MS IM TC-00001633 SANYO Semiconductors DATA SHEET ECH8309 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1418-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Input Capacitance Ciss V DS=- -6V, f=1MHz 1780 pF Output Capacitance Coss V DS=- -6V, f=1MHz 540 pF Reverse Transfer Capacitance Crss V DS=- -6V, f=1MHz 390 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 22 ns Rise Time tr See speci fi ed Test Circuit. 110 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 157 ns Fall Time tf See specifi ed Test Circuit. 123 ns Total Gate Charge Qg V DS=- -6V, VGS=- -4.5V, ID=- -9.5A 18 nC Gate-to-Source Charge Qgs V DS=- -6V, VGS=- -4.5V, ID=- -9.5A 2.8 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -6V, VGS=- -4.5V, ID=- -9.5A 4.9 nC Diode Forward Voltage VSD IS=- -9.5A, VGS=0V - -0.8 - -1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7011A-002 Switching Time Test Circuit 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View 876 5 123 4 Top view 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain PW=10μs D.C.≤1% P. G 50Ω G S D ID= --4.5A RL=1.3Ω VDD= --6V VOUT VIN --4.5V VIN ECH8309

No. A1418-3/4 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A 100 1000 IT13992IT13991 IT13990 --0.01 --0.1 --1.0 --10 IT13989 --25 f=1MHz Ciss Coss Crss Ta=75 0.1 1.0 VDS= --6V 25°C Ta= --25 75°C VGS=0V 1000 100 --0.01 --1.0 23 5 7--0.1 23 5 723 5 7 --10 2 VDD= --6V VGS= --4.5V td(off) tf td(on) tr IT14418 IT14419 Ta=25°C ID= --1.0A --4.5A IT13985 IT13986 0 --2.5 --0.50 --7 --4 --3 --6 --5 --1 --2 --10 --9 --8 --7 --1.0 --1.5 --2.0 --6 --5 --4 --3 --1 --2 --8.0V --2.5V --1.5V VGS= --1.2V --25 25°C Ta=75 VDS= --6V --1.8V --4.5V --6.0V --2.0A --60 --40 --20 0 20 40 60 80 100 120 140 160 VGS= --2.5V , ID= --2.0A VGS= --1.8V , ID= --1.0A VGS= --4.5V , ID= --4.5A

No. A1418-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of February, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the ECH8309 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT14422 IT14421IT14420 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 1812 168 --4.5 --4.0 41 0 1 462 VDS= --6V ID= --9.5A 20 40 0.2 0.8 1.0 0.6 0.4 1.6 1.4 1.5 1.2 80 100 120 1.8 140 160 When mounted on ceramic substrate (900mm2×0.8mm) --10 --100 --1.0 --0.01 --0.1 Operation in this area is limited by RDS(on). 1ms 10msID= --9.5A IDP= --40A DC operation ( Ta=25 °C) 35 7 --10 100ms PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm)