ECH8308 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Best suited for load switching.
  • Low ON-resistance.
  • 1.8V drive.
  • Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -12 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D - -10 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -40 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -12 V Zero-Gate Voltage Drain Current I DSS VDS=- -12V, VGS=0V - -10 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -6V, ID=- -1mA - -0.4 - -1.3 V Forward Transfer Admittance ⏐yfs⏐ VDS=- -6V, ID=- -5A 12 21 S RDS(on)1 I D=- -5A, VGS=- -4.5V 9.2 12.5 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 I D=- -3A, VGS=- -2.5V 14 20 m Ω RDS(on)3 I D=- -1A, VGS=- -1.8V 22 33 m Ω Marking : JK

No. A1182-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS=- -6V, f=1MHz 2300 pF Output Capacitance Coss V DS=- -6V, f=1MHz 720 pF Reverse Transfer Capacitance Crss V DS=- -6V, f=1MHz 550 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 24 ns Rise Time t r See specified Test Circuit. 130 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 230 ns Fall Time t f See specified Test Circuit. 195 ns Total Gate Charge Qg V DS=- -6V, VGS=- -4.5V, ID=- -10A 26 nC Gate-to-Source Charge Qgs V DS=- -6V, VGS=- -4.5V, ID=- -10A 4.0 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -6V, VGS=- -4.5V, ID=- -10A 7.1 nC Diode Forward Voltage V SD IS=- -10A, VGS=0V - -0.79 - -1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7011A-002 Switching Time Test Circuit PW=10μs D.C.≤1% P.G 50Ω G S D ID= --5A RL=1.2Ω VDD= --6V VOUT ECH8308 VIN --4.5V VIN 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View 876 5 123 4 Top view 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain

No. A1182-3/4 Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Forward Transfer Admittance, ⏐yfs⏐ -- S ⏐yfs⏐ -- ID Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A IT13603 IT13604 --0.01 --0.1 --1023 5 5 7 --1.023 5 7 7 3322 100 1000 IT13607 IT13605 1.0 0.1 IT13606 --0.001 --0.01 --10 --0.1 --1.0 IT13608 1000 Ta=25°CID= --1A VDS= --6V Ta= --25 75°C 25°C VGS=0V --25 Ta=75 VDD= --6V VGS= --4.5V td(off) td(on) tr tf Ciss Coss Crss --3A VGS= --2.5V , ID= --3A VGS= --1.8V, ID= --1A --1 --2 --3 --4 --5 --9 --8 --7 --6 --10 --2 --4 --6 --8 --10 --12 --14 IT13601 IT13602 VGS= --1.2V --1.5V--8.0V --3.5V --1.8V--2.5V VDS= --6V Ta=75 --25 °C 25 --4.5V --5A VGS= --4.5V , ID= --5A f=1MHz

No. A1182-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS 20 40 0.4 60 80 100 120 140 160 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT13611 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 When mounted on ceramic substrate (900mm2✕0.8mm) A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT13610 --1.0 --0.1 264 --4.5 IT13609 8 1 21 62 02 42 6 10 14 18 22 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 VDS= --6V ID= --10A IDP= --40A ID= --10A 1ms 10ms DC operation (Ta=25 °C) Operation in this area is limited by RDS(on). 100ms --105732 --10 PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) Note on usage : Since the ECH8308 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice.