ECH8201

ECH8201 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Adoption of FBET, MBIT process.
• High current capacitance.
• Low collector-to-emitter saturation voltage.
• High speed switching.
• High allowable power dissipation.
• Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 100 V Collector-to-Emitter Voltage V CES 100 V Collector-to-Emitter Voltage V CEO 50 V Emitter-to-Base Voltage V EBO 6V Collector Current I C 10 A Collector Current (Pulse) I CP 20 A Base Current I B 1A Collector Dissipation P C When mounted on ceramic substrate (900mm ×0.8mm) 1.6 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Marking : HA 11310EA TK IM TC-00002234 SANYO Semiconductors DATA SHEET ECH8201 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications www.semiconductor-sanyo.com/network

No. A1555-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=40V, IE=0A 0.1 μA Emitter Cutoff Current I EBO VEB=4V, IC=0A 0.1 μA DC Current Gain hFE1V CE=2V, IC=500mA 200 560 hFE2V CE=2V, IC=4A 160 hFE3V CE=2V, IC=10A 110 Gain-Bandwidth Product f T VCE=10V, IC=1A 230 MHz Output Capacitance Cob V CB=10V, f=1MHz 60 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 I C=6A, IB=300mA 65 100 mV VCE(sat)2 I C=2A, IB=40mA 40 75 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=5A, IB=250mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=10μA, IE=0A 100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100μA, RBE=0Ω 100 V V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10μA, IC=0A 6 V Turn-On Time t on See specifi ed Test Circuit. 60 ns Storage Time t stg See specifi ed Test Circuit. 305 ns Fall Time t f See specifi ed Test Circuit. 17 ns Package Dimensions Electrical Connection unit : mm (typ) 7011A-005 Switching Time Test Circuit 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View VR RB VCC=12VVBE= --5V IC=50IB1= --25IB2=5A + +50Ω INPUT OUTPUT RL 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2 8765 1234 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector Top view

No. A1555-3/4 IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V hFE -- IC DC Current Gain, hFE Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Collector Current, IC -- A fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ta=75°C --25°C 100 1000 70.01 325 2 0.1 732 5 1.0 27 35 10 25°C VCE=2V IT15010 23 5 7 23 5 70.01 1.0 23 5 7 100.1 100 VCE=10V IT15011 0.123 5 7 23 5 7 23 5 7 1.0 10 20.01 100 1.0 Ta=75 25°C --25 IT15012 IC / IB=10 0.123 5 7 23 5 7 23 5 7 1.0 10 20.01 100 Ta=75 25°C --25°C IT15013 IC / IB=20 IT15014 VCE=2V Ta=75 --25 IT15008 Ta=75°C --25°C VCE=0.5V IT15009 100 1000 70.01 325 2 0.1 732 5 1.0 27 35 10 25°C 100mA IB=0mA IT15007 5mA 10mA 90mA 80mA 15mA 20mA 25mA 30mA35mA40mA 70mA 50mA 45mA 60mA 0.12 3 57 2 3 57 2 3 57 1.0 10 20.01 100 Ta=75 25°C --25°C IC / IB=50

No. A1555-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of January, 2010. Specifi cations and information herein are subject to change without notice. Base-to-Emitter Saturation V oltage, VBE(sat) -- V VBE(sat) -- IC Collector Current, IC -- A 1.0 0.1 Ta= --25°C 75°C 23 5 7 23 5 7 23 5 7 1.0 10 20.01 IC / IB=50 IT15015 25°C 1.8 1.6 1.0 1.2 1.4 0.8 0.6 0.4 0.2 2006 0 40 80 100 140 120 160 IT15046 Forward Bias A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Dissipation, PC -- W PC -- Ta Ambient Temperature, Ta -- °C When mounted on ceramic substrate (900mm2×0.8mm) 0.1 1.0 0.01 0.01 0.125 37 72 1.0537 2 10537 2 3 5 IC=10A 10ms 1ms 100msDC operat ion ICP=20A IT15045 100 μs 500 μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) ≤10μs