ECH8101

ECH8101 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Adoption of FBET, MBIT process.
• High current capacitance.
• Low collector-to-emitter saturation voltage.
• High speed switching.
• High allowable power dissipation.
• Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO -50 V Collector-to-Emitter Voltage V CES -50 V Collector-to-Emitter Voltage V CEO -50 V Emitter-to-Base Voltage V EBO -6 V Collector Current I C -10 A Collector Current (Pulse) I CP -20 A Base Current I B -1 A Collector Dissipation P C When mounted on ceramic substrate (900mm ×0.8mm) 1.6 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Marking : GA N0409EA TK IM TC-00002126 SANYO Semiconductors DATA SHEET ECH8101 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications www.semiconductor-sanyo.com/network

No. A1422-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB= -40V, IE=0A -0.1 μA Emitter Cutoff Current I EBO VEB= -4V, IC=0A -0.1 μA DC Current Gain hFE1V CE= -2V, IC= -500mA 200 560 hFE2V CE= -2V, IC= -4A 140 hFE3V CE= -2V, IC= -10A 90 Gain-Bandwidth Product f T VCE= -10V, IC= -500mA 140 MHz Output Capacitance Cob V CB= -10V, f=1MHz 115 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 I C= -6A, IB= -300mA -100 -170 mV VCE(sat)2 I C= -2A, IB= -40mA -70 -120 mV Base-to-Emitter Saturation Voltage V BE(sat) I C= -2A, IB= -40mA -0.85 -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC= -10μA, IE=0A -50 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC= -100μA, RBE=0Ω -50 V V(BR)CEO IC= -1mA, RBE=∞ -50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE= -10μA, IC=0A -6 V Turn-On Time t on See specifi ed Test Circuit. 80 ns Storage Time t stg See specifi ed Test Circuit. 137 ns Fall Time t f See specifi ed Test Circuit. 23 ns Package Dimensions Electrical Connection unit : mm (typ) 7011A-005 Switching Time Test Circuit 8765 1234 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector Top view 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View VR RB VCC= --25VVBE=5V + +50Ω INPUT VOUT RL 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC= --50IB1=25IB2= --5A

No. A1422-3/4 IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V hFE -- IC DC Current Gain, hFE Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Collector Current, IC -- A fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A 100 VCE= --10V IT14447 100 23 5 7--1.0 --10 23 7 5 IT14448 f=1MHz --0.123 5 7 23 5 7 23 5 7 --1.0 --10 2--0.01 --100 --10 --1.0 Ta=75 75°C Ta= --25°C 25°C 25°C --25 IT14449 IC / IB=10 VCE= --2V Ta=75 --25 --10 --6 --8 --2 --4 IT14444 VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A 75°C Ta= --25 25°C --0.12 3 57 2 3 57 2 3 57 --1.0 --10 2--0.01 --100 --10 Ta=75 25°C --25 IT14450 IC / IB=20 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ta=75°C --25°C VCE= --2V IT14446 100 1000 25°C Ta=75°C --25°C VCE= --0.5V IT14445 100 1000 25°C --100mA --10 --6 --8 --2 --1 --4 --7 --9 --3 --5 IB=0mA IT14455 --5mA --10mA --90mA --80mA --15mA --20mA --25mA --30mA --35mA --40mA --45mA --70mA --60mA --50mA

No. A1422-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of November, 2009. Specifi cations and information herein are subject to change without notice. 1.8 1.6 1.0 1.2 1.4 0.8 0.6 0.4 0.2 2006 0 40 80 100 140 120 160 IT14454 Base-to-Emitter Saturation V oltage, VBE(sat) -- V VBE(sat) -- IC Collector Current, IC -- A Forward Bias A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Dissipation, PC -- W PC -- Ta Ambient Temperature, Ta -- °C When mounted on ceramic substrate (900mm2×0.8mm) --0.1 --1.0 --10 --0.01 --0.01 --0.125 37 72 --1.0537 2 --10537 2 3 5 IC= --10A 10ms 1ms 100msDC operation (Ta=25 °C) ICP= --20A IT14453 --1.0 --0.1 Ta= --25°C 75°C 23 5 7 23 5 7 23 5 7 --1.0 --10 2--0.01 IC / IB=50 IT14452 25°C 100 μs 500 μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A 75°C Ta= --25°C 25°C --0.123 5 7 23 5 7 23 5 7 --1.0 --10 2--0.01 --100 --10 Ta=75 25°C --25 IT14451 IC / IB=50 ≤10μs