TIG058E8_12 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low-saturation voltage • Low voltage drive (4V)
  • Enhansment type • Built-in Gate-to-Emitter protection diode
  • Mounting Height 0.9mm, Mounting Area 8.12mm
  • dv / dt guarantee *
  • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage V CES 400 V Gate-to-Emitter Voltage (DC) V GES ±6 V Gate-to-Emitter Voltage (Pulse) V GES PW≤1ms ±8 V Collector Current (Pulse) I CP CM=150μF, VGE=4V 150 A Maximum Collector-to-Emitter dv / dt dV CE / dt V CE≤320V, starting Tch=25°C 400 V / μs Channel Temperature Tch 150 °C Storage Temperature Tstg -40 to +150 °C * : Concerning dv / dt (slope of Collector V oltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1. Package Dimensions unit : mm (typ) 7011A-004 TIG058E8 N-Channel IGBT Light-Controlling Flash Applications Product & Package Information
  • Package : ECH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3000 pcs./reel Packing Type: TL Marking Electrical Connection 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View TL 876 5 123 4 TIG058E8-TL-H ZB LOT No.

No. A1381-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector-to-Emitter Breakdown Voltage V (BR)CES IC=2mA, VGE=0V 400 V Collector-to-Emitter Cutoff Current I CES V CE=320V, VGE=0V 10 μA Gate-to-Emitter Leakage Current I GES VGE=±6V, VCE=0V ±10 μA Gate-to-Emitter Threshold Voltage V GE(off) V CE=10V, IC=1mA 0.4 0.9 V Collector-to-Emitter Saturation Voltage V CE(sat) I C=100A, VGE=4V 4.0 5.6 V Input Capacitance Cies VCE=10V, f=1MHz 2200 pF Output Capacitance Coes 32 pF Reverse Transfer Capacitance Cres 24 pF Fig.1 Large Current R Load Switching Circuit Note1. Gate Series Resistance RG ≥ 230Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt ≤ 400V / μs is satisfi ed at customer’s actual set evaluation, RG < 230Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.

Ordering Information

Device Package Shipping memo TIG058E8-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VGE Gate-to-Emitter V oltage, VGE -- V Collector Current, IC -- A IT14281 120 140 160 180 100 200 IT14282 12 5 7 69 834 1 0 0.5 120 140 160 180 100 200 Tc=25°C VGE=5.0V 4.0V 3.0V VCE=10V 2.5V 25°C 75°CTc= --25 100kΩ CM RL RG VCC TIG058E8

No. A1381-3/7 Case Temperature, Tc -- °C Gate-to-Emitter Cutoff V oltage, VGE(off) -- V VGE(off) -- Tc Collector-to-Emitter V oltage, VCE -- V VCE -- VGE Gate-to-Emitter V oltage, VGE -- V Case Temperature, Tc -- °C VCE(sat) -- Tc Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector-to-Emitter V oltage, VCE -- V VCE -- VGE Gate-to-Emitter V oltage, VGE -- V Collector-to-Emitter V oltage, VCE -- V VCE -- VGE Gate-to-Emitter V oltage, VGE -- V Collector-to-Emitter V oltage, VCE -- V Cies, Coes, Cres -- pF Cies, Coes, Cres -- VCE 130A IT14286 05 0 7 5 100 125 15025--25--50 IC=150A VGE=4V IT14283 23456 130A 100A Tc= --25°C IC=150A IT14284 23456 130A 100A Tc=25°C IC=150A IT14285 23456 130A 100A Tc=75°C IC=150A 100A IT14287 0 50 75 100 125 15025--25--50 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 01 6 1 8 2 0 6841 2 1 4 102 100 1000 IT14288 Cies Coes Cres f=1MHz SW Time -- RG Switching Time, SW Time -- ns SW Time -- ICP Switching Time, SW Time -- ns Collector Current (Pulse), ICP -- A Gate Series Resistance, RG -- Ω 23 5 7 3 2100 IT14289 1000 100 tr td(off) td(on) Test circuit Fig.1 V GE=4V V CC=320V R G=270Ω C M=150μF PW=50 μs tf 23 5 7 3 2100 57 1000 IT14290 1000 100 tr td(off) td(on) tf Test circuit Fig.1 VGE=4V VCC=320V ICP=150A CM=150μF PW=50μs

No. A1381-4/7 Gate-to-Emitter V oltage, VGE -- V Collector Current (Pulse), ICP -- A Collector Current (Pulse), ICP -- A Maximum Capacitor, CM -- μF CM -- ICP ICP -- VGEdv / dt -- RG Gate Series Resistance, RG -- Ω Turn OFF, dv / dt -- V / μs IT14293 20 40 60 80 100 120 1400 160 100 150 200 250 300 350 400 450 VGE=5V VCE=320V CM=150μF Tc≤70°C IT14292 24 5 6 7 8310 100 120 140 180 160 VCE=320V CM=150μF IT14291 200 250 300100 150500 200 400 600 1200 1000 800 1400 Fig.1 Switching test circuit V GE=4V V CC=320V R L=2Ω C M=150μF PW=50 μs Tc=25°C Tc=70°C

No. A1381-5/7 Embossed Taping Specifi cation TIG058E8-TL-H

No. A1381-6/7 Outline Drawing Land Pattern Example TIG05E8-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65

No. A1381-7/7PS This catalog provides information as of June, 2012. Specifi cations and information herein are subject to change without notice. Note : TIG058E8 has protection diode between gate and emitter but handling it requires suffi cient care to be taken. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.