EC4K11MF SANYO | Alldatasheet

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Technical content

Features

  • High gain, high SNR, high input resistance, low voltage operation, low power consumption.
  • Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Maximum Power Supply Voltage V DD max R L=2.2kΩ, Connection 4 V Maximum Input Voltage V IN max --0.5 to +0.5 V Allowable Power Dissipation P D 100 mW Storage Temperature Tstg --55 to +150 °C Operating Temperature Topr --20 to +70 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Power Supply Voltage V DDopr 2 3.6 V Consumption Current I DD VDD=2.0V, VIN=0V, RL=2.2kΩ 140 170 200 µA Input Capacitance Ci V DD=2.0V, f=1MHz 2.7 pF [Ta=25˚C, VDD=2.V, RL=2.2kΩ, Ci=3pF, See specified Test Circuit.] Voltage Gain G V f=1kHz, VIN=10mV 9.5 12 14 dB Frequency Characteristics ∆GVf f=1kHz to 100Hz 0 - -1 dB Total Harmonic Distortion THD f=1kHz, V IN=10mV 0.25 % Output Noise Voltage V NO VIN=0V, A curve - -90 - -84 dB Marking : KD SANYO Semiconductors DATA SHEET O0406IG MS IM TC-00000223 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN EC4K11MF CMOS IC Amplifier IC for Condenser Microphone

No. A0506-2/3 Package Dimensions Test Circuit unit : mm (typ) 7046-001 1 : GND 2 : IN 3 : GND 4 : OUT SANYO : ECSP1410-4-F 1.0 0.25 0.35 0.6 1.40.9 0.4 0.025 Polarity Discriminating Mark Bottom View Top View 2.2kΩ VDD VIN 3pF OUT GND IN 100nF IT11449 1.0 10 100 75327532 75327 53221.0 10 100 7532 1k 7532 10k 753 100k IDD -- VDD Supply V oltage, VDD -- V Consumption Current, IDD -- µA GV -- VDD Supply V oltage, VDD -- V Voltage Gain, GV -- dB Voltage Gain, GV -- dB GV -- f Frequency Characteristics, f -- Hz Input V oltage, VIN -- mV Total Harmonic Distortion, THD -- % THD -- VIN IT11447 220 200 210 190 180 170 160 150 140 V DD =2V Cin=3pF R L=2.2kΩ V IN=10mV IT11444 IT11445 Cin=3pF R L=2.2kΩ V IN=10mV f=1kHz IT11446 R L=2.2kΩ V DD =2V Cin=3pF R L=2.2kΩ f=1kHz

No. A0506-3/3 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW100 120 01 0 2 0 3 0 4 0 5 06 07 08 0 IT11448 This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice.