EC4H07CA SANYO | Alldatasheet

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Technical content

Features

  • Low noise : NF=1.5dB typ (f=2GHz).
  • High cutoff frequency : fT=10GHz typ (VCE=1V). fT=12.5GHz typ (VCE=3V).
  • Low operating voltage.
  • High gain :⏐S21e⏐2=9.5dB typ (f=2GHz).
  • Ultraminiature (1008 size) and thin (0.6mm) leadless package .
  • Halogen free compliance (UL94HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 9V Collector-to-Emitter Voltage V CEO 4V Emitter-to-Base Voltage V EBO 2V Collector Current I C 30 mA Collector Dissipation P C 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=5V, IE=0A 1.0 μA Emitter Cutoff Current I EBO VEB=1V, IC=0A 10 μA DC Current Gain h FE VCE=1V, IC=5mA 100 160 Continued on next page. NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications

No. A1070-2/7 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product fT1V CE=1V, IC=5mA 8 10 GHz fT2V CE=3V, IC=15mA 12.5 GHz Output Capacitance Cob V CB=1V, f=1MHz 0.55 0.7 pF Reverse Transfer Capacitance Cre V CB=1V, f=1MHz 0.4 pF Forward Transfer Gain ⏐S21e⏐21V CE=1V, IC=5mA, f=2GHz 8 9.5 dB ⏐S21e⏐22V CE=3V, IC=15mA, f=2GHz 10.5 dB Noise Figure NF V CE=1V, IC=3mA, f=2GHz 1.5 2.3 dB Package Dimensions unit : mm (typ) 7036-003 Marking (Top view) Electrical Connection (Top view) 0.5 0.2 0.3 0.8 1.00.6 0.6 Top View Bottom View Polarity Discriminating Mark 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : ECSP1008-4 Polarity mark (Top) Base Emitter Collector *Electrodes : Bottom Polarity mark (Top) Base Emitter Collector P This product adopts a high-frequency process. Please be careful when handling it beause it is susceptible to static electricity.

No. A1070-3/7 Collector-to-Emitter V oltage, VCE -- V IC -- VCE Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V IC -- VBE Collector Current, IC -- mA Collector Current, IC -- mA hFE -- IC DC Current Gain, hFE Collector Current, IC -- mA fT -- IC Gain-Bandwidth Product, fT -- GHz ⏐S21e⏐2 -- IC Collector Current, IC -- mA ⏐S21e⏐2 -- IC Forward Transfer Gain, ⏐S21e⏐ 2 -- dB Collector Current, IC -- mA Forward Transfer Gain, ⏐S21e⏐ 2 -- dB Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Cre -- VCB Reverse Transfer Capacitance, Cre -- pF IT15438 IT15439 IB=0mA 0.05mA 0.04mA 0.03mA 0.02mA 0.01mA VCE =3V 1V IT15444 IT15445 1.0 2 3 5 7 2 3 5 710 100 1.0 10 23 5 723 5 7 100 f=1GHz VCE=3V 1V VCE=3V f=2GHz IT15440 IT15442 IT15441 1.00.1 223 5 7 2 3 5 735 7 10 100 100 1000 1.0 23 5 7 10 23 5 7 100 1.0 0.1 0.1 1.0 2 3 5 72 3 5 7 10 1.0 VCE=3V VCE=3V f=1MHz IT15443 0.1 0.1 1.0 2 3 5 72 3 5 7 10 1.0 f=1MHz

No. A1070-4/7 Collector Current, IC -- mA NF -- IC Noise Figure, NF -- dB Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- mW IT02249 100 120 4020 100 12060 80 140 1601.0 1.0 0.5 1.5 IT15446 2.0 2.5 3.0 4.0 3.5 5.0 4.5 5327 5 3210 VCE=3V f=2GHz S Parameters (Common emitter) VCE=1V , IC=1mA, ZO=50Ω VCE=1V , IC=5mA, ZO=50Ω

No. A1070-5/7 S Parameters (Common emitter) VCE=1V , IC=10mA, ZO=50Ω VCE=1V , IC=20mA, ZO=50Ω VCE=3V , IC=1mA, ZO=50Ω

No. A1070-6/7 S Parameters (Common emitter) VCE=3V , IC=5mA, ZO=50Ω VCE=3V , IC=10mA, ZO=50Ω VCE=3V , IC=20mA, ZO=50Ω

No. A1070-7/7PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice.