EC4305C

EC4305C SANYO | Alldatasheet

Document overview

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Technical content

Features

• 4V drive.
• Halogen free compliance (UL94 HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -200 mA Drain Current (Pulse) I DP PW≤10µs, duty cycle≤1% - -800 mA Allowable Power Dissipation P D Mounted on a glass-epoxy printed circuit board (145✕80✕1.6mm) 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=--1mA, VGS=0V --30 V Zero-Gate Voltage Drain Current I DSS VDS=--30V, VGS=0V --1 µA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage V GS(off) V DS=--10V, ID=--100µA --1.2 --2.6 V Forward Transfer Admittance ⏐yfs⏐ VDS=--10V, ID=--100mA 150 250 mS Static Drain-to-Source On-State Resistance RDS(on)1 I D=--100mA, VGS=--10V 1.4 1.9 Ω RDS(on)2 I D=--50mA, VGS=--4V 2.8 4.0 Ω Input Capacitance Ciss V DS=--10V, f=1MHz 22 pF Output Capacitance Coss V DS=--10V, f=1MHz 6.0 pF Reverse Transfer Capacitance Crss V DS=--10V, f=1MHz 3.5 pF Continued on next page.

No. A0874-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Turn-ON Delay Time t d(on) See specified Test Circuit. 34 ns Rise Time t r See specified Test Circuit. 59 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 435 ns Fall Time t f See specified Test Circuit. 250 ns Total Gate Charge Qg V DS=--10V, VGS=--10V, ID=--200mA 1.6 nC Gate-to-Source Charge Qgs V DS=--10V, VGS=--10V, ID=--200mA 0.5 nC Gate-to-Drain “Miller” Charge Qgd V DS=--10V, VGS=--10V, ID=--200mA 0.1 nC Diode Forward Voltage V SD IS=--200mA, VGS=0V --0.86 --1.2 V Package Dimensions Type No. Indication Electrical Connection unit : mm (typ) 7036-001 Switching Time Test Circuit PW=10µs D.C.≤1% P. G 50Ω G S D ID= --100mA RL=150Ω Rg VDD= --15V VOUT EC4305C VIN --10V VIN Rg=5kΩ 0.5 0.2 0.3 0.8 1.00.6 0.6 Top View Bottom View Polarity Discriminating Mark 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : ECSP1008-4 AL Top view Polarity mark (Top) Gate Source Source Gate Drain Drain *Electrodes : on the bottom Polarity mark (Top) Top view

No. A0874-3/4 ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ambient Temperature, Ta -- °C Drain Current, ID -- mA --20 --200 --60 --100 --140 --180 --40 --80 --120 --160 --40 --20 --120 --80 --160 --60 --140 --100 --180 --200 IT11209 IT11210 IT11212 IT11211 Ta= --2 5°C Ta=25°C VGS= --2.0V VDS= --10V - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 VGS= --4V , ID= --50mA VGS= --10V , ID= --100mA --10.0V ID= --50mA --100mA --2.5V --4.0V --6.0V --8.0V --15.0V SW Time -- ID Ciss, Coss, Crss -- VDS ⏐yfs⏐ -- ID IS -- VSD Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, ⏐yfs⏐ -- mS Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF 100 1000 IT11215 IT11213 1.0 IT11216 IT11214 --0.0001 --0.001 --0.01 --0.1 --1.0 VGS=0V --25 Ta= td(on) td(off) tf tr VDD= --15V VGS= --10V Ciss Coss Crss --0.001 --0.0123 5 7 2 --0.135 7 2 --1.035 7 100 VDS= --10V 75°CTa= --25 25°C f=1MHz

No. A0874-4/4PS Note on usage : Since the EC4305C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of November, 2007. Specifications and information herein are subject to change without notice. PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V --1 --2 --6 --4 --3 --7 --8 --9 --5 --10 IT11217 VDS= --10V ID= --200mA IT12737 20 40 60 80 100 120 0.05 0.10 0.15 0.20 140 160 Mounted on a glass-epoxy printed circuit board (145✕80✕1.6mm)