EC3H02BA_09 SANYO | Alldatasheet

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Technical content

Features

  • Low noise : NF=1.0dB typ (f=1GHz).
  • High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
  • High cutoff frequency : fT=7GHz typ.
  • Ultrasmall (1006size), slim (0.5mm) leadless package.
  • Halogen free compliance (UL94 HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to- Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2V Collector Current IC 70 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 μA DC Current Gain hFE VCE=5V, IC=20mA 120 180 Gain-Bandwidth Product fT1V CE=5V, IC=20mA 5 7 GHz Output Capacitance Cob V CB=10V, f=1MHz 0.7 1.2 pF Reverse Transfer Capacitance Cre V CB=10V, f=1MHz 0.45 pF Continued on next page. http://semicon.sanyo.com/en/network

No. A1064-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Forward Transfer Gain ⏐S21e⏐21V CE=5V, IC=20mA, f=1GHz 9 12 dB ⏐S21e⏐22V CE=2V, IC=3mA, f=1GHz 8.5 dB Noise Figure NF V CE=5V, IC=7mA, f=1GHz 1.0 1.8 dB Package Dimensions unit : mm (typ) 7039A-005 Type No. Indication (Top view) Electrical Connection (Top view) 1 : Collector 2 : Base 3 : Emitter SANYO : ECSP1006-3 0.6 0.15 0.35 1.00.5 0.65 0.25 0.025 0.5 Polarity discriminating mark Base Emitter Collector Base Emitter Collector Polarity mark (Top) *Electrodes : Bottom Polarity mark (Top) B

No. A1064-3/5 Collector Current, IC -- mA NF -- IC Noise Figure, NF -- dB Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- mW Collector Current, IC -- mA ⏐S21e⏐2 -- IC Forward Transfer Gain, ⏐S21e⏐ 2 -- dB Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Cre -- VCB Reverse Transfer Capacitance, Cre -- pF 120 100 2006 0 40 80 100 140 120 160 IT01369 1033 25 7 100325 757 2 1.0 IT01368IT01367 0.1 1.0 325 100.1 73 25 7 3 27 1.0 321.0 57 3 22 5735 7 10 100 f=1MHz 0.1 1.0 325 100.1 73 25 7 3 27 1.0 f=1MHz f=1GHz VCE=5V f=1GHz IT01366IT01365 VCE =5V Collector Current, IC -- mA hFE -- IC DC Current Gain, hFE Collector Current, IC -- mA fT -- IC Gain-Bandwidth Product, fT -- GHz 100 IT01363 VCE=5V IT01364 1.0 VCE=5V 1.072 23 5 723 5 7 10 100321.0 57 3 22 5735 7 10 100

No. A1064-4/5 S Parameters (Common emitter) VCE=1V , IC=1mA, ZO=50Ω VCE=1V , IC=5mA, ZO=50Ω VCE=2V , IC=3mA, ZO=50Ω VCE=2V , IC=10mA, ZO=50Ω

No. A1064-5/5PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. S Parameters (Common emitter) VCE=5V , IC=7mA, ZO=50Ω VCE=5V , IC=20mA, ZO=50Ω This catalog provides information as of February, 2009. Specifications and information herein are subject to change without notice.