EC3H01B SANYO | Alldatasheet
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Technical content
Features
- Low noise : NF=1.8dB typ (f=150MHz).
- High gain : S21e2=16dB typ (f=150MHz).
- Ultraminiature (1006 size) and thin (0.5mm) leadless package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 20 V Collector-to-Emitter Voltage V CEO 12 V Emitter-to-Base Voltage V EBO 2V Collector Current I C 50 mA Collector Dissipation P C 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =10V, IE=0 1.0 µA Emitter Cutoff Current I EBO VEB =1V, IC =0 10 µA DC Current Gain hFE 1V CE =2V, IC =3mA 100 180 hFE 2V CE =2V, IC =50mA 70 Gain Bandwidth Product fT1V CE =2V, IC =3mA 1.0 1.7 GHz fT2V CE =2V, IC =20mA 5.0 GHz Output Capacitance Cob V CB =10V, f=1MHz 1.1 1.8 pF Reverse Transfer Capacitance Cre V CB =10V, f=1MHz 0.8 pF Forward Transfer Gain S21e2 VCE =2V, IC =3mA, f=150MHz 13 16 dB Noise Figure NF V CE =2V, IC =3mA, f=150MHz 1.8 3.0 dB SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN EC3H01B Package Dimensions unit : mm 2183 [EC3H01B]
72100 TS IM TA-2481
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Epitaxial Planar Silicon Transistor
No.6573-2/5 V CE =2V V CE=2V 1.057 10 1002335 7 2 3 5 7 Collector Current, IC -- mA Noise Figure, NF -- dB Cre -- VCB Collector Current, IC -- mA 7 1.0 10 23 5 723 5 7 Collector-to-Base V oltage, VCB -- V Gain-Bandwidth Product, fT -- GHz Reverse Transfer Capacitance, Cre -- pF 1.0 0.1 7 0.1 23 5 7 1.0 23 23 57 10 1.0 0.1 7 0.1 1.0 23 23 5723 5 7 10 Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF 1.0 100 1.0 23 5 77 10 23 5 735 fT -- IChFE -- IC Collector Current, IC -- mA DC Current Gain, hFE f=1MHz f=1MHz IT01305 IT01306 IT01307 IT01308 IT01309 Forward Transfer Gain, S21e 2 -- dB NF -- IC Collector Current, IC -- mA 7 1.0 2 3 57 2 3 57 10 100 IT01310 S21e2 -- IC f=150MHz V CE =2V f=150MHz V CE =2V Type No. Indication (Top view) Electrical Connection (Top view) A Polarity mark (Top) Base Emitter Collector *Electrodes : on the bottom Polarity mark (Top) Base Emitter Collector This product adopts a high-frequency process. Please be careful when handling it beause it is susceptible to static electricity.
No.6573-3/5 100 120 0 160 14012010080604020 PC -- Ta Ambient Temperature, Ta -- °C Collector Dissipation, PC -- mW IT01311 S Parameters (Common emitter) V CE =1V , IC =3mA, Z O =50Ω V CE =1V , IC =30mA, Z O =50Ω V CE =2V , IC =1mA, Z O =50Ω
No.6573-4/5 V CE =2V , IC =3mA, Z O =50Ω V CE =2V , IC =10mA, Z O =50Ω V CE =2V , IC =30mA, Z O =50Ω
No.6573-5/5 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS