EC3A04B SANYO | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Small IGSS .
- Small Ciss.
- Ultraminiature package facilitates miniaturization in end products.
- Halogen free compliance (UL94HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSX 30 V Gate-to-Drain Voltage V GDS --30 V Gate Current I G 10 mA Drain Current I D 10 mA Allowable Power Dissipation P D 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Gate-to-Drain Breakdown Voltage V (BR)GDS IG=--10µA, VDS=0V - -30 V Gate-to-Source Leakage Current I GSS VGS=- -20V, VDS=0V - -1.0 nA Cutoff Voltage V GS(off) V DS=10V, ID=1µA- -0.18 - -0.65 - -2.2 V Marking : KC Continued on next page.
No. A0509-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Drain Current I DSS VDS=10V, VGS=0V 0.6* 3.0* mA Forward Transfer Admittance yfs VDS=10V, VGS=0V, f=1kHz 3.0 5.0 mS Input Capacitance Ciss V DS=10V, VGS=0V, f=1MHz 4 pF Reverse Transfer Capacitance Crss V DS=10V, VGS=0V, f=1MHz 1.1 pF Static Drain-to-Source On-State Resistance RDS(on) V DS=10mV, VGS=0V 200 Ω * : The EC3A04B is classified by IDSS as follows : (unit : mA). Rank 2 3 IDSS 0.6 to 1.5 1.2 to 3.0 Package Dimensions unit : mm (typ) 7039-002 Type No. Indication (Top view) Electrical Connection (Top view) 1 : Source 2 : Drain 3 : Gate SANYO : ECSP1006-3B Top View Bottom View 0.15 0.15 0.35 0.2 0.05 0.05 0.05 1 3 2 1.00.5 0.5 0.250.25 0.05 0.65 0.4 0.6 Polarity Discriminating Mark Polarity mark (Top) Source Drain Gate *Electrodes : Bottom Polarity mark (Top) Source Drain Gate KC
No. A0509-3/4 G S D ID IGDL DC DC Cutoff V oltage, VGS (off) -- V VGS(off) -- IDSS Drain Current, IDSS -- mA Drain Current, ID -- mA Forward Transfer Admittance, yfs -- mS yfs -- ID Drain Current, IDSS -- mA Forward Transfer Admittance, yfs -- mS yfs -- IDSS 05 1 0 15 20 25 10p 100p 10n 100n Drain-to-Source V oltage, VDS -- V IGDL -- VDS Gate-to-Drain Leak Current, IGDL -- A ITR00640 ID =1mA IT11453 IT11454 57 1.0 23 5 --1.0 V DS =10V ID =1.0µA IT11455 V DS =10V V GS =0V f=1kHz 53275 1.0 1.0 IDSS =1.0mA 3.0mA 2.0mA V DS =10V f=1kHz 0.1 5327532 1.0 1.0 ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA ITR00636 ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA V DS =10V Ta=--25 25°C 75°C IT11452 IDSS =3.0mA 2.0mA 1.0mA V DS =10V ID -- VDS Drain Current, ID -- mA Drain Current, ID -- mA ID -- VDS Drain-to-Source V oltage, VDS -- VDrain-to-Source V oltage, VDS -- V IT11450 012345 0.5 1.0 1.5 2.0 3.0 2.5 V GS =0V --0.1V --0.2V --0.3V --0.4V IT11451 05 1 0 15 20 30 25 0.5 1.0 1.5 2.0 3.0 2.5 V GS =0V --0.1V --0.2V --0.3V --0.4V
No. A0509-4/4PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of July, 2007. Specifications and information herein are subject to change without notice. 02 0 4 0 6 0 8 0 100 120 140 160 100 120 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- mW ITR00646 Drain-to-Source V oltage, VDS -- V Ciss -- VDS Input Capacitance, Ciss -- pF Drain-to-Source V oltage, VDS -- V Crss -- VDS Output Capacitance, Crss -- pF IT11456 IT11457 V GS =0V f=1MHz 1.0 23 557 7 10 23 5 1.0 V GS =0V f=1MHz 1.0 23 557 7 10 23 5 1.0