EC3A01B SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Ultrasmall (1006 size), thin (0.5mm) leadless package.
  • Especially suited for use in electret condenser microphone for audio equipments and telephones.
  • Excellent voltage characteristics.
  • Excellent transient characteristics.
  • Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage V GDO - -20 V Gate Current I G 10 mA Drain Current I D 1m A Allowable Power Dissipation P D 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Gate-to-Drain Breakdown Voltage V (BR)GDO IG =- - -100µA - -20 V Cutoff Voltage V GS (off) V DS =5V, ID =1µA - -0.2 - -0.6 - -1.2 V Drain Current I DSS VDS =5V, VGS =0 140 350 µA Forward Transfer Admittance yfs VDS =5V, VGS =0, f=1kHz 0.5 1.2 mS Input Capacitance Ciss V DS =5V, VGS =0, f=1MHz 3.5 pF Reverse Transfer Capacitance Crss V DS =5V, VGS =0, f=1MHz 0.65 pF *The EC3A01B is classified by IDSS as follows.(unit : µA) Rank V4A V5A IDSS 140 to 240 210 to 350 13105GB TS IM / 42503 TS IM TA-100435 / 13001 TS IM TA-3160 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN EC3A01B N-Channel Silicon Junction FET Electret Condenser Microphone

Applications

No.6612-2/5 [Ta=25°C, VCC =4.5V , RL=1kΩ , Cin=15pF, See Specified Test Circuit] RatingsParameter Symbol Conditions min typ max Unit Voltage Gain G V f=1kHz, VIN=10mV - -3.0 dB Reduced Voltage Characteristics ΔG VV f=1kHz, VIN=10mV, VCC =4.5→ 1.5V - -1.2 - -3.5 dB Frequency Characteristics ΔGvf f=1kHz to 110kHz - -1.0 dB Input Impedance Z IN f=1kHz 25 M Ω Output Impedance Z O f=1kHz 1000 Ω Total Harmonic Distortion THD f=1kHz, V IN=30mV 1.2 % Output Noise Voltage V NO VIN=0, A Curve - -110 dB Package Dimensions unit : mm 2188A Type No. Indication (Top view) Electrical Connection (Top view) Switching Time Test Circuit 1 : Drain 2 : Source 3 : Gate SANYO : ECSP1006-3 0.35 0.2 0.05 0.150.15 0.6 0.4 0.65 0.05 0.25 0.25 0.05 1.0 0.5 0.5 0.05 Top ViewBottom View Marking Polarity mark (On the top) Drain Source Gate *Electrodes : On the bottom Polarity mark Drain Source Gate V VCC =4.5V 33µF 1kΩ 1kΩOSC 15pF VCC =1.5V V BATHDVTVM Voltage Gain Frequency Characteristics Distortion Reduced Voltage Characteristics Output Impedance

No.6612-3/5 Drain-to-Source V oltage, VDS -- V 01 89 1 0 234567 Drain Current, ID -- µA 500 400 300 200 100 ID -- VDS IT02310 V GS =0 --0.1V --0.2V --0.4V --0.5V --0.3V Drain-to-Source V oltage, VDS -- V 012345 Drain Current, ID -- µA 500 400 300 200 100 ID -- VDS IT03015 V GS =0 --0.1V --0.2V --0.4V --0.5V --0.3V 500 400 300 200 100 ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA IT02312 IT02313 V DS =5V 400 320 240 160 IDSS =350 µA 250 µA 150 µA Ta=75 V DS =5V 25°C --25 1.0 0.1 100 0 50 100 150 200 THD -- VIN Input V oltage, VIN -- mV Total Harmonic Distortion, THD -- % IT02316 100 120 0 160 14012010080604020 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW IT02317 VGS (off) -- IDSS Drain Current, IDSS -- µA Cutoff Voltage, VGS (off) -- V IT02315 THD : VCC =4.5V f=1kHz IDSS : VDS =5.0V --0.30 --0.35 --0.40 --0.45 --0.50 --0.55 --0.60 --0.65 --0.70 0 100 200 300 400 500 V DS =5V ID =1µA 250µA 350µA IDSS =150µA 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 100 200 300 400 500 yfs -- IDSS Drain Current, IDSS -- µA Forward Transfer Admittance, yfs -- mS IT02314 V DS =5V V GS =0 f=1kHz

No.6612-4/5 7 1075323 21.0 Ciss -- VDS Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF IT02318 1.0 7 10753221.0 Crss -- VDS Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF IT02319 V GS =0 f=1MHz V GS =0 f=1MHz 0 100 200 300 400 500 G V -- IDSS Drain Current, IDSS -- µA V oltage Gain, GV -- dB IT02320 --1.7 --1.5 --1.3 --1.1 --0.9 --0.7 --0.5 ΔG VV -- IDSS Drain Current, IDSS -- µA Reduced V oltage Characteristics, ΔG VV -- dB IT02321 --7 --6 --5 --4 --3 --2 --1 0 100 200 300 400 500 ΔG VV : VCC =4.5V→ 1.5V V IN=10mV f=1kHz IDSS : VDS =5.0V G V : VCC =4.5V V IN=10mV R L=1.0kΩ f=1kHz IDSS : VDS =5.0V 0 100 200 300 400 500 Zi -- IDSS Drain Current, IDSS -- µA Input Impedance, Zi -- MΩ IT02323 910 920 930 940 950 960 900 ZO -- IDSS Drain Current, IDSS -- µA Output Impedance, ZO -- Ω IT02324 --119 --118 --117 --116 --115 --114 --113 --112 --111 --120 VNO -- IDSS Drain Current, IDSS -- µA Output Noise V oltage, VNO -- dB IT02325 0 100 200 300 400 500 0 100 200 300 400 500 0 100 200 300 400 500 THD -- IDSS Drain Current, IDSS -- µA Total Harmonic Distortion, THD -- % IT02322 0.5 1.0 1.5 2.0 2.5 Zi : VCC =4.5V V IN=10mV f=1kHz IDSS : VDS =5.0V THD : V CC =4.5V V IN=30mV f=1MHz IDSS : VDS =5.0V V NO : VCC =4.5V V IN=0, A Curve R L=1.0kΩ IDSS : VDS =5.0V ZO : VCC =4.5V V IN=10mV f=1kHz IDSS : VDS =5.0V

No.6612-5/5PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice.