EC3202C SANYO | Alldatasheet
Document overview
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Technical content
Features
- Ultrasmall-sized package, facilitates miniaturization in end products.
- Low output capacitance.
- Low collector-to-emitter saturation voltage.
- Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 25 V Collector-to-Emitter Voltage V CEO 15 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 100 mA Collector Current (Pulse) I CP 200 mA Base Current I B 20 mA Collector Dissipation P C 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =15V, IE=0 0.1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0 0.1 µA DC Current Gain h FE VCE =2V, IC =5mA 800 3200 Gain-Bandwidth Product f T VCE =5V, IC =10mA 240 MHz Output Capacitance Cob V CB =10V, f=1MHz 3 pF Continued on next page. Muting Circuit Applications SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN EC3202C Package Dimensions unit : mm 2184 [EC3202C]
21401 TS IM TA-2711
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Epitaxial Planar Silicon Transistor 2 1 3 4 0.5 0.2 0.2 0.3 0.6 0.3 0.05 0.05 0.05 0.8 0.05 1.0 0.6 (Bottom view) 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4
No.6798-2/4 1.0 2 3 5 7 107 2 3 5 7 100 2 100 Collector-to-Emitter V oltage, VCE -- V IC -- VCE Collecotor Current, IC -- mA IT02788 IT02791IT02790 Base-to-Emitter V oltage, VBE -- V IC -- VBE Collecotor Current, IC -- mA 100 120 Collector Current, IC -- mA hFE -- IC DC Current Gain, hFE 1000 IB =0 200 µA 160µA 140µA 120µA 100µA 20µA 40µA 60µA 80µA 180 µA 012345 Collector-to-Emitter V oltage, VCE -- V IC -- VCE Collector Current, IC -- mA IT02789 IB =0 0.5µA 1.0µA 1.5µA 2.0µA 2.5µA 3.0µA 3.5µA 4.0µA 4.5µA 5.0µA V CE =2V V CE =2V Ta=75 --25 Ta=75°C 25°C --25°C Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE (sat) I C =10mA, IB=1mA 14 30 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =10mA, IB=1mA 0.74 1.1 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0 25 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 15 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10µA, IC =0 5 V On-Resistance Ron I B=3mA, f=1MHz 0.9 Ω Electrical Connection (Top view) Polarity mark (Top) Base Emitter Collector Collector *Electrodes : Bottom Polarity mark(Top) Base Emitter Collector Collector
No.6798-3/4 0.01 0.1 1.0 0.001 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 2 Collector Current, IC -- mA VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V IT02794 IC / IB =10 25°CTa=75 --25 1.0 0.1 23 5 7 1.072 3 5 7 Base Current, IB -- mA Ron -- IB On-resistance, Ron -- Ω IT02796 f=1MHz 0.1 1.0 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 2 Collector Current, IC -- mA VBE (sat) -- IC Base-to-Emitter Saturation V oltage, VBE (sat) -- V IT02795 IC / IB =10 Ta=--25°C 75°C 25°C IN OUT IB 10kΩ 1kΩ 100 120 140 150 160 Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- mW IT02797 4020 100 12060 80 140 160 0.1 23 5 7 1.0 23 5 7 10 2 A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V 0.1 0.01 0.001 IT02798 10ms 100ms DC operation ICP =0.2A IC max=0.1A Ta=25°C Single pulse Mounted on Glass Epoxy Substrate 1ms 0.001 2 3 57 0.01 2 3 57 0.1 2 3 IT02793IT02792Collector Current, IC -- mA fT -- IC Gain-Bandwidth Product, fT -- GHz 100 Base-to-Emitter V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF 1.0 10 2 32 3 5 7 f=1MHzV CE =5V
No.6798-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. PS