EC30LA02 NIEC | Alldatasheet

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ç ç OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.06g Rating Symbol EC30LA02 Unit Repetitive Peak Reverse Voltage VRRM 20 V Repetitive Peak Surge Reverse Voltage VRRSM 25(pulse width ≤ 1 µs duty ≤ 1/50) V

2.1 Ta=25°C *1

Average Rectified Output Current I o 3.0 Tl=85°C Tl=Lead Temperature 50Hz Half Sine Wave Resistive Load A RMS Forward Current I F(RMS) 4.71 A Surge Forward Current I FSM 50 50Hz Half Sine Wave,1cycle Non-repetitive A Operating JunctionTemperature Range T jw -40 to +125 °C Storage Temperature Range T stg -40 to +125 °C Electrical • Thermal Characteristics Characteristics Symbol Conditions Min. Typ. Max. Unit Peak Reverse Current IRM Tj= 25 °C, V RM= V RRM - - 3 mA Peak Forward Voltage VFM Tj= 25 °C, I FM= 3.0A - - 0.39 V Junction to Ambient Rth (j-a) Alumina Substrate mounted *1 - - 108 Thermal Resistance Junction to Lead Rth (j-l) - - - 23 °C /W *1: Alumina Substrate mounted (Soldering Lands=2x2mm,Both Sides) The curves of Average Forward Current vs. Temperature are the value that do not consider Reverse Power Dissipation. In actual use, consider the Reverse Power Dissipation to avoid thermal runaway of the diode. SBD TypeTypeTypeType : EC30LA02EC30LA02EC30LA02EC30LA02 FEATURESFEATURESFEATURESFEATURES * Miniature Size,Surface Mount Device * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Packaged in 12mm Tape and Reel * Not Rolling During Assembly ç

ç ç EC30LA_ OUTLINE DRAWING (Dimensions in mm) ç

FORWARD CURRENT VS. VOLTAGE EC30LA02 0 0.2 0.4 0.6 0.8 INSTANTANEOUS FORWARD VOLTAGE (V) 0.2 0.5 INSTANTANEOUS FORWARD CURRENT (A) Tj=25°C Tj=125°C AVERAGE FORWARD POWER DISSIPATION 0 1 2 3 4 5 AVERAGE FORWARD CURRENT (A) 0.4 0.8 1.2 1.6 2.0 AVERAGE FORWARD POWER DISSIPATION (W) EC30LA02 0° 180° q CONDUCTION ANGLE HALF SINE WAVE D.C. RECT 180° RECT 120° RECT 60°

PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE EC30LA02 Tj= 125 °C 0 4 8 12 16 20 PEAK REVERSE VOLTAGE (V) 100 200 500 PEAK REVERSE CURRENT (mA) AVERAGE REVERSE POWER DISSIPATION EC30LA02 0 4 8 12 16 20 REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION (W) D.C. RECT 300° RECT 240° RECT 180° HALF SINE WAVE

AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE EC30LA02 Alumina Substrate mounted(L and=2×2mm), VR M=0V 0 25 50 75 100 125 AMBIENT TEMPERATURE (°C) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 AVERAGE FORWARD CURRENT (A) 0° 180° q CONDUCTION ANGLE HALF SINE WAVE D.C. RECT 180° RECT 120° RECT 60° AVERAGE FORWARD CURRENT VS. LEAD TEMPERATURE EC30LA02 VR M=0V 0 25 50 75 100 125 LEAD TEMPERATURE (°C) AVERAGE FORWARD CURRENT (A) 0° 180° q CONDUCTION ANGLE HALF SINE WAVE D.C. RECT 180° RECT 120° RECT 60°

f=50Hz,Harf Sine Wave,Non-Repetitive,No Load TIME (s) SURGE FORWARD CURRENT (A) 0.02s IFSM JUNCTION CAPACITANCE VS. REVERSE VOLTAGE EC30LA02 Tj=2 5° C,Vm=20mVRM S,f=100 kHz,Typica l Value 0.5 1 2 5 10 20 50 REVERSE VOLTAGE (V) 100 200 500 JUNCTION CAPACITANCE (pF)