EC10DS1 NIEC | Alldatasheet
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ç ç OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.06g Rating Symbol EC10DS1 Unit Repetitive Peak Reverse Voltage VRRM 100 V Non-repetitive Peak Reverse Voltage VRSM 250 V 0.74 Ta=25 °C *1 Average Rectified Output Current I O 1.0 Ta=25 °C *2 50Hz Half Sine Wave Resistive Load A RMS Forward Current IF(RMS) 1.57 A Surge Forward Current I FSM 25 50Hz Half Sine Wave,1cycle Non-repetitive A Operating JunctionTemperature Range T jw -40 to +150 °C Storage Temperature Range T stg -40 to +150 °C Electrical • Thermal Characteristics Characteristics Symbol Conditions Min. Typ. Max. Unit Peak Reverse Current IRM Tj= 25 °C, V RM= V RRM - - 10 µA Peak Forward Voltage VFM Tj= 25 °C, I FM= 1.0A - - 1.1 V *1 - - 157 Thermal Resistance Rth (j-a) Junction to Ambient *2 - - 108 °C /W *1 Glass Epoxy Substrate Mounted (Soldering Lands=2x2mm,Both Sides) *2 Alumina Substrate Mounted (Soldering Lands=2x2mm,Both Sides) ç DIODE Type : EC10DS1EC10DS1EC10DS1EC10DS1 FEATURESFEATURESFEATURESFEATURES * Miniature Size,Surface Mount Device * High Surge Capability * Low Forward Voltage Drop * Low Reverse Leakage Current * Packaged in 12mm Tape and Reel * Not Rolling During Assembly ç
ç ç EC10DS1 OUTLINE DRAWING (Dimensions in mm)