E3M0280090D CREE | Alldatasheet

Document overview

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Technical content

Features

  • 3rd generation SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Automotive EV battery chargers
  • Renewable energy
  • High voltage DC/DC converters
  • Telecom Power Supplies Package Part Number Package Marking E3M0280090D TO-247-3 E3M0280090 VDS 900 V I D @ 25˚C 11.5 A RDS(on) 280 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -8/+18 V Note: 1 VGSop Gate - Source Voltage (Recommended operating values) -4/+15 V Note: 2 ID Continuous Drain Current 11.5 A VGS = 15 V, TC = 25˚C Fig. 19

7.5 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 22 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 54 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Md Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw Note (1): When using MOSFET Body Diode VGSmax = -4V/+18V Note (2): MOSFET can also safely operate at 0/+15 V

E3M0280090D Rev. - , 07-2018 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 900 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.7 2.1 3.5 V VDS = VGS, ID = 1.2 mA Fig. 11 1.6 V VDS = VGS, ID = 1.2 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 280 364 mΩ VGS = 15 V, ID = 7.5 A Fig. 4, 5, 6385 VGS = 15 V, ID = 7.5 A, TJ = 150ºC gfs Transconductance 3.6 S VDS= 15 V, IDS= 7.5 A Fig. 7 3.1 VDS= 15 V, IDS= 7.5 A, TJ = 150ºC Ciss Input Capacitance 150 pF VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 20 Crss Reverse Transfer Capacitance 2 Eoss Coss Stored Energy 4.5 μJ Fig. 16 EON Turn-On Switching Energy (Body Diode FWD) 57 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 7.5 A, RG(ext) = 2.5Ω, L= 220 μH, TJ = 150ºC Fig. 26, Note 3EOFF Turn Off Switching Energy (Body Diode FWD) 6 td(on) Turn-On Delay Time 26 ns VDD = 400 V, VGS = -4 V/15 V ID = 7.5 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27, Note 3 tr Rise Time 10 td(off) Turn-Off Delay Time 17.5 tf Fall Time 7.5 RG(int) Internal Gate Resistance 26 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 2.8 nC VDS = 400 V, VGS = -4 V/15 V ID = 7.5 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 3.4 Qg Total Gate Charge 9.5 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.8 V VGS = -4 V, ISD = 4 A Fig. 8, 9, 104.4 V VGS = -4 V, ISD = 4 A, TJ = 150 °C IS Continuous Diode Forward Current 9.6 A VGS = -4 V, TC = 25˚C Note 1 IS, pulse Diode pulse Current 22 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 trr Reverse Recover time 20 ns VGS = -4 V, ISD = 4 A, VR = 400 V dif/dt = 800 A/µs, TJ = 150 °C Note 1Qrr Reverse Recovery Charge 47 nC Irrm Peak Reverse Recovery Current 3.4 A Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 2.3 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode

0.01 SinglePulse

Figure 22. Safe Operating AreaFigure 21. Transient Thermal Impedance Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs.

Figure 29. Clamped Inductive Switching Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

E3M0280090D Rev. - , 07-2018 Package Dimensions Package TO-247-3 Recommended Solder Pad Layout TO-247-3 POS Inches Millimeters Min Max Min Max A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC N 3 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Pinout Information:

  • Pin 1 = Gate
  • Pin 2, 4 = Drain
  • Pin 3 = Source T U WV

E3M0280090D Rev. -, 07-2018 Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • LTSPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support