E24N ESTEK | Alldatasheet
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Technical content
International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
V DSS = 55V R DS(on) = 0.07Ω I D = 17A S D G T O -22 AB Parameter Min. Typ. Max. Units R θJC R θCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W R θJA Thermal Resistance Parameter Max. Units I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 17 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12 A I DM Pulsed Drain Current 68 P D C = 25°C Power Dissipation 45 W Linear Derating Factor 0.30 W/°C V GS Gate-to-Source Voltage ±20 V E AS Single Pulse Avalanche Energy 71 mJ I AR Avalanche Current 10 A E AR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T J Operating Junction and -55 to + 175 T STG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Absolute Maximum Ratings HEXFET Power MOSFET E 24N
Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, I D = 250µA ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient –––0.052 ––– V/°C Reference to 25°C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance ––– ––– 0.07 Ω V GS = 10V, I D = 10A V GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = V GS , I D = 250µA g fs Forward Transconductance 4.5 ––– ––– S V DS = 25V, I D = 10A DS = 55V, V GS = 0V DS = 44V, V GS = 0V, T J = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -20V Q g Total Gate Charge ––– ––– 20 I D = 10A Q gs Gate-to-Source Charge ––– ––– 5.3 nC V DS = 44V Q gd Gate-to-Drain ("Miller") Charge ––– ––– 7.6 V GS = 10V, See Fig. 6 and 13 t d(on) Turn-On Delay Time ––– 4.9 ––– V DD = 28V t r D = 10A t d(off) Turn-Off Delay Time ––– 19 ––– R G = 24Ω t f D = 2.6Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact C iss Input Capacitance ––– 370 ––– V GS = 0V C oss Output Capacitance ––– 140 ––– pF V DS = 25V C rss Reverse Transfer Capacitance ––– 65 ––– ƒ = 1.0MHz, See Fig. 5 nH µA nA I DSS Drain-to-Source Leakage Current I GSS L S Internal Source Inductance ––– ––– ns S D G 4.5 7.5 Electrical Characteristics @ T J = 25°C (unless otherwise specified) ––– L D Internal Drain Inductance ––– ––– ––– Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 10A, di/dt ≤ 280A/µs, V DD ≤ V (BR)DSS T J ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. V DD = 25V, starting T J = 25°C, L = 1.0mH R G = 25Ω , I AS = 10A. (See Figure 12) Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. V SD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, I S = 10A, V GS = 0V t rr Reverse Recovery Time ––– 56 83 ns T J = 25°C, I F = 10A Q rr Reverse RecoveryCharge ––– 120 180 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A S D G HEXFET Power MOSFET E 24N