E1010 ESTEK | Alldatasheet

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Technical content

z Advanced Process Technology z Ult ra Low On-Resistance z Dynamic dv/dt Rating z 175°C Operating Temperature z Fast Switching z Fully Avalanche Rated

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety o f a p p l i c a t i o n s . The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance V DSS = 60V I D = 84A R DS(ON) =13mΩ Pin1–Gate Pin2–Drain Pin3–Source Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84.⑦ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 I DM Pulsed Drain Current ① 330 A PD @TC = 25°C Power Dissipation 170 W Linear Derating Factor 1.4 W/°C V GS Gate-to-Source Voltage ± 20 V I AR Avalanche Current① 50 A E AR Repetitive Avalanche Energy① 17 mJ dv/dt Peak Diode Recovery dv/dt . ③ 4.0 V/ns T J T STG Operating Junction and Storage Temperature Range -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Parameter Typ. Max. Units R θJC Junction-to-Case ––– 0.75 R θCS Case-to-Sink, Flat, Greased Surface 0.50 ––– R θJA Junction-to-Ambient ––– 62 °C/W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 60 — — V V GS =0V,I D 250uA V (BR)DSS T J Breakdown Voltage Temp. Coefficient — 0.064 — V/ْC Reference to 25ْC,I D =1mA R DS(on) Static Drain-to-Source On-Resistance — — 13 mΩ V GS =10V,I D =50A V GS(th) Gate Threshold Voltage 2.0 — 4.0 V V DS GS , I D =250μA g fs Forward Transconductance 20 — — S V DS =25V,I D =50A — — 25 V DS =60V,V GS =0V I DSS Drain-to-Source Leakage current — — 250 μA V DS =48V,V GS =0V,T J =150ْC Gate-to-Source Forward leakage — — 100 V GS =20V I GSS Gate-to-Source Reverse leakage — — -100 nA V GS =-20V Q g Total Gate Charge — — 130 Q gs Gate-to-Source charge — — 28 Q gd Gate-to-Drain ("Miller") charge — — 44 nC I D = 5 0 A V DS = 4 8 V V GS =10V See Fig.6 and 13 t d(on) Turn-on Delay Time — 12 — t r Rise Time — 78 — t d(off) Turn-Off Delay Time — 48 — t f Fall Time — 53 — nS V DD = 3 0 V I D = 5 0 A R G =3.6Ω V GS =10V See Figure 10 L D Internal Drain Inductance — 4.5 — L S Internal Source Inductance — 7.5 — nH Between lead, 6mm(0.25in.) from package and center of die contact C iss Input Capacitance — 3210 — C oss Output Capacitance — 690 — Crss Reverse Transfer Capacitance — 140 — pF V GS = 0 V V DS = 2 5 V f =1.0MH Z See Figure 5 E AS Single Pulse Avalanche Energy. — 1180 320 mJ I AS = 50A, L = 260μH E 1010

Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current . (Body Diode) — I SM Pulsed Source Current . (Body Diode) ① — 330 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 1.3 V T J =25ْC,I S =50A,V GS =0V ④ t rr Reverse Recovery Time — 110 nS Q rr Reverse Recovery Charge — 220 330 μC T J =25ْC,I F =50A di/dt=100A/μs ④ t on Forward Turn-on Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls + L D Notes: 1. Repetitive rating; pulse width limited by 4. Pulse width≤400μs; duty cycle ≤2%. 5. This is a typical value at device destruction and represents operation outside rated limits. 6. This is a calculated value limited to TJ = 175°C . 7.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. max. junction temperature. 2. Starting TJ = 25°C, L = 260μH RG = 25W, IAS = 50A, VGS =10V 3. ISD≤50A, di/dt≤230A/μs, VDD≤V(BR)DSS, TJ≤175°C E 1010