DZ3S068D0L PANASONIC | Alldatasheet

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Ver. CEDPublication date: July 2012 1 DZ3S068D Silicon epitaxial planar type For surge absorption circuit  Features  Excellent rising characteristics of zener current IZ  Low zener operating resistance RZ  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: 02  Packaging DZ3S068D0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Total power dissipation *1 PT 150 mW Electrostatic discharge *2 ESD ±10 kV Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) (2 Diode total) Solder in ( 0.6 mm × 0.6 mm) *2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)  Common Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 10 mA 1.0 V Zener voltage *1, 2 VZ IZ = 5 mA 6.46 7.14 V Zener operating resistance RZ IZ = 5 mA 30 Ω Zener rise operating resistance RZK IZ = 0.5 mA 60 Ω Reverse current IR VR = 4 V 0.1 µA Temparature coefficient of zener voltage *3 SZ IZ = 5 mA 3.1 mV/°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C) * 2: VZ guaranteed 20 ms after current flow. *3: Tj = 25°C to 150°C Unit: mm 1: Cathode-1 2: Cathode-2 3: Anode-1, 2 Panasonic SSMini3-F3-B JEITA SC-89 Code SOT-490 1 2

Ver. CED DZ3S068D IF  VF IZ  VZ IR  VR RZ  IZ SZ  IZ Ct  VR 10−3 0 0.5 1.0 1.5 2.0 10−2 10−1 103 102 DZ3S068D_IF-VF Forward current IF (mA) Forward voltage VF (V) Ta = 25°C 10−3 0 4 128 10−2 10−1 102 DZ3S068D_IZ-VZ Zener current IZ (mA) Zener voltage VZ (V) Ta = 25°C 10−11 0 1 2 643 5 10−7 10−5 10−9 DZ3S068D_IR-VR Reverse current IR (mA) Reverse voltage VR (V) Ta = 25°C 10−1 1 1 0 1 02 DZ3S068D_RZ-IZ Zener operating resistance RZ (Ω) Zener current IZ (mA) Ta = 25°C 0 2 864 10 DZ3S068D_SZ-IZ Temparature coefficient of zener voltage SZ (mV/°C) Zener current IZ (mA) 0 1 2 543 DZ3S068D_Ct-VR Terminal capacitance Ct (pF) Reverse voltage VR (V) Ta = 25°C 0 40 16012080 200 150 200 100 250 DZ3S__ PT-Ta Total power dissipation PT (mW) Ambient temperature Ta (°C) Mounted on glass epoxy print board. (2 diode total) (45 mm × 45 mm × 1 mm) Solder in : 0.6 mm × 0.6 mm 102 103 10−3 10−1 10 103 DZ3S__Rth-t Thermal resistance Rth (°C/W) Time t (s) (1) Non-heat sink (2) Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) Solder in : 0.6 mm × 0.6 mm (1) (2) Rth(j-l) = 70°C/W 10−1 102 102 103 104 DZ3S__PZSM-tW Non-repetitive reverse surge power dissipation PZSM (W) Pulse width tW (µs) Ta = 25°C PT  Ta Rth  t PZSM  tW

Ver. CED DZ3S068D SSMini3-F3-B Unit: mm 1.00 ±0.05 (0.50) (0.50) 1.60 +0.05 −0.03 0.26 +0.05 −0.02 1 2 0.85 +0.05 −0.03 1.60 ±0.050.70 +0.05 −0.03 0 to 0.10 (5°) (0.45) 0.13 +0.05 −0.02 0.375 ±0.05 (5°)  Land Pattern (Reference) (Unit: mm)

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