DTQ3204 DIN-TEK | Alldatasheet

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Technical content

N-Channel 20 V (D-S) MOSFET

FEATURES

  • TrenchFET® power MOSFET
  • 100 % Rg and UIS tested

APPLICATIONS

  • High power density DC/DC
  • Synchronous rectification
  • Embedded DC/DC Notes a. Based on T C = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. The DFN3X3 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady stat e conditions is 70 °C/W. PRODUCT SUMMARY VDS (V) R DS(on) () MAX. I D (A) a Qg (TYP.) N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 20 VGate-Source Voltage VGS +12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 46 TA = 25 °C 19.8 b, c TA = 70 °C 15.8 b, c Pulsed Drain Current (t = 300 μs) IDM 180 Continuous Source-Drain Diode Current TC = 25 °C IS 14.1 TA = 25 °C 3.2 b, c Single Pulse Avalanche Current L = 0.1 mH IAS 15 Single Pulse Avalanche Energy EAS 11.25 mJ Maximum Power Dissipation TC = 25 °C PD 31.2 WTC = 70 °C 20 TA = 25 °C 3.6 b, c TA = 70 °C 2.3 b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °CSoldering Recommendations (Peak Temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL T YPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f t  10 s R thJA 24 34 °C/WMaximum Junction-to-Case (Drain) Steady State R thJC 34 Top View DFN 3x3 EP Top View Bottom View Pin 1 DTQ3204 www.din-tek.jp

a. Puls e te st; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. T CASE = 25 °C. Expected voltage stress during 100 % UIS test. Production datalog is not available. Stresses beyond those li sted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless ot herwise noted) PARAMETER SYMBOL T EST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 20 - - VDrain-Source Breakdown Voltage (transient) c VDSt VGS = 0 V, ID(aval) = 15 A, ttransient = 50 ns 26 - - VDS Temperature Coefficient VDS/TJ ID = 250 μA -2 0 - mV/° CVGS(th) Temperature Coefficient VGS(th)/TJ -- 4 . 6 - Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 0.5 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = 12V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V - - 1 μAVDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10 On-State Drain Current a ID(on) VDS  5 V, VGS = 10 V 30 - - A Drain-Source On-State Resistance a RDS(on) VGS = 4.5 V, ID = 10 A 0.0048 VGS = 2.5 V, ID = 8 A 0.0057 Forward Transconductance a gfs VDS = 10 V, ID = 10 A - 65 - S Dynamic b Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz - 1450 - pFOutput Capacitance Coss - 445 - Reve rse Transfer Capacitance Crss -3 8 - Crss/Ciss Ratio - 0.026 0.052 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A - 19.4 29 nCVDS = 15 V, VGS = 4.5 V, ID = 10 A -9 . 4 1 Gate-Source Charge Qgs -4 - Gate-Drain Charge Qgd -1 . 8 - Output Char ge Qoss VDS = 15 V, VGS = 0 V - 12.5 - Gate Resista nce Rg f = 1 MHz 0.4 1.65 3.3  Turn-On De lay Time td(on) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  -9 1 8 ns Rise Time tr -8 1 6 Turn-Off D elay Time td(off) -1 8 3 6 Fall Time tf -8 1 6 Turn-On Dela y Time td(on) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  -1 5 3 0 Rise Ti me tr -1 2 2 4 Turn-Off Delay Time td(off) -1 8 3 6 Fall Time tf -9 1 8 Drain-Source Body Diod e Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - - 14.1 APulse Diode Forward Current a ISM -- Body Dio de Voltage VSD IS = 3 A - 0.76 1.1 V Body Diode Re verse Recovery Time trr IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C -2 4 4 8 n s Body Diode Reverse Recovery Charge Qrr -1 4 2 8 n C Re verse Recovery Fall Time ta -1 2 - nsReverse Rec overy Rise Time tb -1 2 - DTQ3204 www.din-tek.jp 0.0053 0.0063 180

ERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge Transfe r Characteristics Capacitance On-Resistance vs. Junction Temperature 100 120 ID - Drain Curren t (A) VDS - Drain-to-Source Voltage (V) VGS = 3 V VGS = 10 V thru 4V VGS = 2 V 0.004 0.0045 0.0055 0.0057 0.006 0.0065 0 16 32 48 64 80 RDS(on) - On-Resistance (Ω) ID - Drain Current (A VGS = 2.5 V VGS = 4.5 V 0 4 8 12 16 20 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 15 V VDS = 20 V VDS = 10 V ID = 10 A 100 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 360 720 1080 1440 1800 0 5 10 15 20 25 30 C - Capacitance (pF) VDS - Drain-to-Source V oltage (V) Ciss Coss Crss 0.004 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) ID = 10 A VGS = 4.5 V VGS = 2.5 V DTQ3204 www.din-tek.jp 0.005 0.006 0.007 0.008 0.009

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Source -Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area 0.001 0.01 0.1 100 IS - Source Current (A VSD - Source-to-D rain Voltage (V) TJ = 150 °C TJ = 25 - 1.0 - 0 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 VGS(th) - Variance (V) TJ - Temp erature (°C) ID = 250 μA ID = 5 m A 0.000 0.005 0.010 0.015 0.020 0.025 02468 1 0 RDS(on) - On- Resistance (Ω) VGS - Gate-to-Source Voltage (V TJ = 125 °C TJ = 25 °C ID = 10 A 120 160 200 0.001 0.01 0.1 1 10 Power (W) Time (s) 0.01 0.1 100 1000 0.01 0.1 1 10 100 ID - Drain Current (A) VDS - Dra in-to-Source Voltage (V) * VGS > mini mum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms IDM Limited TA = 25 °C Single Puls e BVDSS Limi ted 10 ms 10 s 1 s DC ID Limited 100 μs DTQ3204 www.din-tek.jp

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Current De rating* Power, Junction-to-Case Power, Junction-to-Ambient * The power di ssipation PD is based on T J (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the cu rrent rating, when this rating falls below the package limit. 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) 0 25 50 75 100 125 150 Power (W) TC - Case Temperature (°C) 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 Power (W) TA - Am bient Temperature (°C) DTQ3204 www.din-tek.jp

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Norm alized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Norm alized Effective Transient Thermal Impedance Square Wave Puls e Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single P ulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base=R thJA = 70 °C/W TJM -T A =P DMZthJA(t) 4. Surface M ounted 0.1 0.0001 0.001 0.01 0.1 1 Norm alized Effective Transient Thermal Impedance Square Wave Puls e Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Puls e DTQ3204 www.din-tek.jp

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