DTN6

DTN6 SANYO | Alldatasheet

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Features

• AC power control. - Peak OF F-state voltage : 400, 600V. - RMS ON-state current : 6A. Repetitive Peak VprM 400 600 Vv OFF-State Voltage RMS ON-State Current Iq(RMs) Single-phase full-wave, > 6 A Te=90°C Surge ON-State Current Itgsm Peak 1 cycle,50Hz > 60 A Amperes Squared-Seconds SiT?-dt imsStS10ms > 18 A’S ( Critical Rate of Rise of diT/dt > 50 Alys ON-State Current Peak Gate Power Dissipation Pom > 5 Ww Average Gate Power Dissipation Pgay) > 0.5 Ww Peak Gate Forward Current Igm > +2 A Peak Gate Forward Voltage Vom > £10 Vv Junction Temperature Tj ad 125 °C Storage Temperature Tstg > -40to 4125 °C Weight > 1.7 g Electrical Characteristics at Ta = 25°C min typ max unit Repetitive Peak Ippm — Vp=VprM 20° yA OFF-State Current Peak ON-State Voltage Vem Ipm=9A 15 v [Guitical Rate of Rise of Commutating (dv/dt)e) Vp=400V,Tj= 125°C 4 Vius OFF-State Voltage Holding Current ly Iqm=1A,Vp=12V 50 mA Gate - Trigger Current (I) Igor Vp=12V,RL=202 20 mA ” (11) lor Vp=12V,R,=200 20 mA ” (il) Igy Vp=12V,R,=202 30 mA ” dv) Igr Vp=12V,RL=202 20 mA Gate - Trigger Voltage > (1) Vor Vp=12V,RL=202 1.5 v ” (1) Vor Vp=12V,R,=202 1.5 v » (I) Ver Vp=12V,R,=202 1.0 v ” (vy) Ver Vp=12V,R,=202 15 v Gate - Nontrigger Voltage Vep Te = 125°C, Vp=Vprm 0.2 v Thermal Resistance Rth(j-c) AC 3.8 °C/W > : The gate trigger modes are shown below. Package Dimensions 1263 = (unit: mm) ,,__15 47max a a ‘i e SS [or are 4 cet [ar a ee 32 743 donll SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 93094MO (KOTO) BX-9232 No.4730-1/3

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4 Ior(Te)igr(Te = 25°C) - Te 16 Ver(To\\Verl(Tce = 25°C) - Te

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: fo NI PAR EPS PRA ee =n EPS Tree) él Pp rN © Te eS ee CUP PSssserr *e See Pt] TET Ty Xe 20 be) 20 40 60 °80 100° 120 140 ORG -20 o 20° 40 60 . BO: 100 120. %0 Case Temperature,Te — °C Case Temperature,Te — °C No.4730-2/3

SSSSSSSSSSSSSSSSSSsSssssSSSSsssssssssssssssSSSSSSFeeee lu(Toy(Te= 25°C) ~ Te Ior(tw)/Igt_ - tw TCEET TT Tee) UCT Perea Vp=12V| Vp=12V, EEOC) | Sa 6 20 NESS 8 NU Rectangular wave ie roh 6 5 DV TTT lor iNT TT) 2 ieee eo 3 BH € 3 s a a RST od FP DSSS ati tt td | Pore “40-20 0 20 40 60 80 10 120 140 710 10 100 5 Case Temperature,Te ~ °C Gate Trigger Pulse Width,tw — us z Rth(j-) - t . HE > HUT HH g UU S HUE ee FETT TT Zot aml EET TTT TT rr F PUP E SECT & DUE Pe & Boots Sar for 1.0 0 100 Time,t — s HE No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, eee No.4730-3/3