DTM8-N SANYO | Alldatasheet

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+ Insulation type - Peak OFF-state voltage : 200 to 600V - RMS ON-state current : 8A + TO-220 package Absolute Maximum Ratings at Ta= 25°C CDTIM DTM DIM 8C-N 8E-N 8G-N_ unit Repetitive Peak OFF-State Voltage Vprm 200 400 600 v RMS ON-State Current Tnams) Te=83°C, > > 8 OA single-phase full-wave Surge ON-State Current Itsm Peak 1 cycle,50Hz - > 80 A Amperes Squared-Seconds fit-dt 1msStS10ms > > 382 A'S Peak Gate Power Dissipation Pom {2 50Hz,dutyS 10% ad > 5 W Average Gate Power Dissipation Potavy > > 05 W Peak Gate Current Icom £2 50Hz,duty S 10% > > +2 A Peak Gate Voltage Vem {2 50Hz,dutyS 10% > > +10 v Junction Temperature Tj > > 125 °C Storage Temperature Tstg > —40to +125 °C Weight > > 21 g Electrical Characteristics at Ta=25°C min typ max unit Repetitive Peak Ippm —s T}= 125°C, Vp= Vor 2 mA OFF-State Current Peak ON-State Voltage Vim Ipm=12A 1.5 v Critical Rate of Rise of (dv/dt)e Tj=125°C, Vp =200V(C), 10 V/ps OFF-State Voltage 400V(E to G) Holding Current ln Ri= 1002 50 mA Gate Trigger Current (1) Igor Vp=12V,Ri = 202 30 mA (Il) Ig Vp=12V,R_=202 30 mA (I) Igp Vp=12V,R,=202 50 mA (VY) Igr Vp=12V, R= 200 30 mA Gate Trigger VoltageX (1) Ver Vp=12V,R,=202 2 v (I) Ver Vp=12V,RL=20Q 2 v (il) Ver Vp=12V,RL=202 2 Vv (VY) Ver Vp=12V,R,=200 2 Vv Gate Nontrigger Voltage Vop Te= 125°C, Vp=Vprm 0.2 Vv Thermal Resistance Rth(Gj-c) Between junction and case,AC. 3.6 °C/W : The gate trigger mode is shown below. Package Dimensions 1144 (unit: mm ) ee a [ese ~ ee oe arn Low TT + T= | UU teat |g |r ast a8 a E SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3019YT/O157AT,TS No.1879-1/3

a It - VT “Tsu - . > © = = Se LITT Te | a 5 3 al > 3 19} x ——_] pay Zz es a ee er an bara 08 12 ty 20 Evy 28 %D 10 wo ON-State Voltage,V_ — V Number of Cycles at 50Hz,n Vg - Ig (1) Vg - Ig (2) » 5 Minimum gate current and voltage required For details ofsheded area, see Vo — 1o(2) . ——— ie vere] = qa82227 oa Shaded atea indicates a 2) Aetaerg TTT | : VGM=10V possible triggering points . & ease ver 4 oy bx Recommended WL GMs 54, 12276227 i circuit load line AAA, rT BY~T ten | BA ee eit 0 Oe 08 ry 16 7.0 Fry 0 7) r) 120 60 200 mo Gate Currentig — A Gate Current,lg — mA = Priav) - TT RMS ; Ta max - IT(RMS) | Smetallwave ret TDN ine Sine full wave z. woh toe] D169 ‘mm _ a1 a2 S10 nb co $ 100x100 2mm Al fin . 3'T Oaot 360 Evan TINY syle eente poled ag 360° @ aConduction ~ i Z| © ool WSS Conduct feos a “a a22360° lA 1 28 A Ae et 22360" ECL LEO PROS T s4 7 fed WIN AKAN TT sll iert i | ir Aes a FS > £2 od KEIN ®@4 eat] | tt PE) ee N NTT) z RMS ON-State Current,lyyeus) — A . RMS ON-State CurrentInyags) — A Tc max - IT(RMS) 160 IgT - Tc SET TT TTT EE 20F — rs 2 oe motes PAA eS ee inotiitware mph & w+ ALI 4+ 1 AU. COOH) Lee FEE < H =e |_| tye POO opie aos * SOOPER Ete | LT ze °% atge a0 «5 6 7 8 & =20 20 wo RMS ON-State CurrentIqms) — A Case Temperature,Te ~*C No.1879-2/3

1 VeT - Tc 2, Ty - Te

| LT TT TTT gesiey RESREERo a RL=20Q. 4 Tae AE aN a he + = 26] \\ 5 | Sl) Rte TT PENNS $ — = QR a Jy oS wet} BLING TT 3 os tO — £16) LS Chie 5 [~~ Sy S ONS L| Fy ce fu ttt i PPS fy wo | & 04 a) —— gLitt iy ry yr) #tP rye rs © LEP ET Ter Vt Tit ey ry fy “6 -20 20 o 100 40 60 20 EJ ) wo 140 Case Temperature,Te — °C Case Temperature,Te ~ °C

5 Rth(j-c) - t 100 Tet(tw)/IGT - tw

PA “eee | Vo=12y wave m0 4 ieee BO OD Tlf Ly P2989 rer a A a Tex2st- 2 ptr Try it Es | [Pee {ope 1 i! : a aaa 8 NIE ; tw pa aN oon i EE er S"tNG EEE] E10 al = _ fee ee a pe Zz 5 \\ Per PTT € J TCr eS 5 3 Bette NGS siti) Pree ASSOC ef [| | [ry , Pa do.t git Tire Tr try) —& 4 10 FS qo % 2 5 00 Ty TST wo 2? Time,t ~ms/s Gate Trigger Pulse Width,ty — ps No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. y y M Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.1879-3/3