DTM6-N SANYO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Features

  • Insulation type - Peak OF F-state voltage : 200 to 600V - RMS ON-state current: 6A - TO-220 package Repetitive Peak Vor 200 400 600 V OFF-State Voltage RMS ON-State Current Trrmsy Te=70°C, > > 6 A single-phase full-wave Surge ON-State Current Itsm Peak 1 cycle,50Hz > ~ 60 A Amperes Squared-Seconds fP?T-dt ImsStS10ms > > 18 A’s Peak Gate Power Dissipation Pom f£250Hz,dutyS 10% > ad 5 WwW Average Gate Power Dissipation Pgiav) > > 05 W Peak Gate Current Io f250Hz,dutyS 10% > > +2 A Peak Gate Voltage Vom f£250Hz2,dutyS10% > > +10 Vv Junction Temperature Tj ad > 125 °C Storage Temperature Tstg > —40to +125 °C Weight - ~ 21 og Electrical Characteristics at Ta=25°C min typ max unit Repetitive Peak Ippu Tj=125°C,Vp=Vprm 2 mA OFF-State Current Peak ON-State Voltage Vim Iym=9A 150 =O«WN Critical Rate of Rise of (dv/dt)C (Bo 125°C, Vp=200V (C), 10 Vips OFF-State Voltage AO0V(E to G) Holding Current ly Ry=1002 50 mA Gate Trigger Current (1) — Igr Vp=12V,R,=202 30 mA (1) Igr Vp=12V,RL=202 30) mA (il) Igp Vp=12V,R,,=202 50 mA (VY) Igp Vp=12V,R,=202 30 mA Gate Trigger VoltageX (1) Ver Vp=12V,RL=202 2 v (i) Ver Vp=12V,R,=202 2 Vv (IL) V@p Vp=12V,R,=202 2 Vv (VY) Ver Vp=12V,Ry,=202 2 v Gate Nontrigger Voltage Veo Tce= 125°C, Vp=Vpru 0.2 Vv Thermal Resistance Rth(j-c) Between junction and case,AC 3.8 °C/W * : The gate trigger mode is shown below. Package Dimensions 1144 > (unit: mm ) 17.0 13.4 ee ze | @ pee ts | 6 fre a ae ce ast di} 8 & _ i SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3109MO,TS No.1878-1/3

: 18 (co + |_| Ratedtoad CaS Se i‘: ” CC eager anne oe MEEEEGFEEEER § Coe eo £ oe, z 6 A POCA eS é 3 — Eco Ceo 2 bast gpsnEEES a ee 2 fT a | 5 [| [| | Bj @ 20 i a a SCO 8 ope) 04 08 ante Veeceveey 2 Number of Cycles at 60H42,n ON-State Voltage, Vy — V hes tea) 7 i ia eT : ‘ mH Minimum gate Tt and voltage required to ‘rege al devices ; sor. 1 st a ‘ CET rT) - opens eee tH Gur22Z2ceeeee ST egactoul sateen indicates - e227 2 eee & r t —40°C to +125°C. - Ej 'BEoe: , PSS esa = W2Z2:222 = ann AVA ani Nfs eed ine +4 3 Pdi one VA |\\trigger region. | E ° Av tT Tit ttt iA 8 120 160, 200 2D 0 04 08 42 6% : Gate Current,[g — mA Gate Currentlg — A Ta max - IT(FMS) Ed Pr(av) - IT(RMS) 160 g [Smeillaive 2 ft Tt [i] ° ot LN comm Atfin ae 2 aul a iM 50X50 2mm Al fin [| ee Fy L | Qrox"Ox dam Aly ¢ Lt | g 120 300% 100%2mm Alfin [_| FS) 10 A j E109 NS SOT Tp set Elon, | | |g LANSEo 2 8 Conduction. | |_| 25 80 WAY ai a? jee) I ONRARN te el | | pZ2eu8 ESCLANNGS FH 4 Bg , es AN Ei a 5 1 2 3 4 5 6 ? 6 9 0 go + 2 3 es ee RMS ON-State Current,Iqaus) — A z RMS ON-State Current,lyeus) — A core * Tc max - IT(RMS) 16 GT yous ET TT EET) 6S eee] SSCL) EEE PoePRcho 4 BECeereee pepe SS PEE Hel AP KAU SeNceerrrro at A | PE BC eNoecoe | oP EEol 2 || Merch HH EFrlemae t/ | | | | | sper ze ; / 0} 1+ a2=360 4 55 + i 5 bp we ot eCurtenthiaw A Case Temperature,Te — °C RMS ON-State Current Inams) — A SMAIA

a . Ty - Te Me VeT - Te 2 +H - ae) CD eee Riz20a - > Ie I 4 26; a Lt tty | Lt tt tT §. I. = a 241, Re pr) ost NET TT TTT & 1.0 ar 2. Pity ogg NN DTT So. [-~A< TS E i BONY 7, ga PPA Tg. LT IAA Ey | pI % POS eetis, eee eek. See é 3 ie IM e eee, go =z 4 tony SS ce == i | i | tit Fey ai [i] tT | ; ah “0-0 -0 0 ND HW HO HH 100 120 MO -60 -@ -20 0. 20 y i) 0 o 120 Case Temperature,Te — °C Case Temperature,Te — °C z Rth(j-c) - t 100 ~Tet(ty)/IeT - tw: ‘s LT Resistive load JOO eee BeHt THEE ek HH Te=25C 24 {4 ot} tt ' tL TT . || S | eee rl Pe eR | Rectangular wave? Botti] Titi rT] | og: ooo z LT | 3 IONS 6 1.0 a . Fe a a ce | = INS tw A tHE E TRRONK E i ‘ eytU et = SST} i Peet & Fy soL ITT T TTT TTT I a FEET & » 23 1%? > 1 3 1000 a7 0 100 Time,t ~ mss Gate Trigger Pulse Width,ty — ps MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally ; Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. eee No.1878-3/3