DTM12-N SANYO | Alldatasheet

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  • Insulation type - Peak OFF-state voltage : 200 to 600V - RMS ON-state current : 12A : - TO-220 package Absolute Maximum Ratings at Ta= 25°C DIM DTM DIM 12C-N 12E-N 12G-N_ unit Repetitive Peak OFF-State Voltage Vprm 200 400 600 v RMS ON-State Current Iqaams) Te=73°C, > > 12 A single-phase full-wave Surge ON-State Current Its Peak 1 cycle,50Hz > > 100 A Amperes Squared-Seconds J®t-dt 1msStS10ms > > 50 A’S Peak Gate Power Dissipation Pom £2 50Hz,dutyS 10% aad > 5 OW Average Gate Power Dissipation Poiavy > > 0.5 Ww Peak Gate Current Iem f250Hz,dutyS 10% > > 42° =A Peak Gate Voltage Vom £2 50Hz,dutyS 10% > > +10 v Junction Temperature Ty ~ > 125 °C Storage Temperature Tstg > -40to +125 °C Weight > > 2.1 g Electrical Characteristics at Ta= 25°C min typ max unit Repetitive Peak IpRM ‘Tj=125°C,Vp= Vprm 2 mA OFF-State Current Peak ON-State Voltage Vem Ipy=12A 150=O«W’ Critical Rate of Rise of (dv/dt)e (3 125°C, Vp =200V(C), 10 Vis OFF-State Voltage A00V(E to G) Holding Current Ty Rp=100Q 50 mA Gate Trigger Current (1) Igy Vp=12V,RL=202 30 mA (I) Igr Vp=12V,RL=202 30 mA (1) Igr Vp=12V,RL=202 50 mA (Vv) Ier Vp=12V,R,,=202 30) mA Gate Trigger Voltage (1) Ver Vp=12V,Ri= 202 2 v (I) Ver Vp=12V,R=202 2 Vv (Il) Ver Vp=12V,R,=200 2 sv WV) Ver Vp= 12V,R; = 202 2 Vv Gate Nontrigger Voltage Vgp Te=125°C,Vp=Vprm 0.2 v Thermal Resistance Rth(j-c) Between junction and case,AC 3.0 °C/W 2X : The gate trigger mode is shown below. Package Dimensions1144 (unit: mm ) . 5.0 39 6.5max a a ee ee __ iss se ee r el ee ee ea 32] @ Sapa ty | 8 ire Low = eT LEGft Lap “Lay ast qi 8 ican

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BLP PTT! Ane eeeen 4 7 zo { H+ Eo 5 10 0 100 1000 1 10 00 & Time,t — msis Cate Trigger Pulse Width,ty — ps MI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information {including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ee No.1880-3/3