DTM10-N SANYO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Features

  • Insulation type - Peak OF F-state voltage : 200 to 600V - RMS ON-state current : 10A + TO-220 package Repetitive Peak Vprm 200 400 600 V OFF-State Voltage RMS ON-State Current Ipqams) Te=83°C, > > 10 A single-phase full-wave Surge ON-State Current Itsm Peak 1 cycle,50Hz > > 100 A Amperes Squared-Seconds s?T-dt 1msStS10ms > > 32 A’s Peak Gate Power Dissipation Pom £250Hz,dutyS 10% > > 5 WwW Average Gate Power Dissipation Pgav) > > 0.5 WwW Peak Gate Current Icom f2 50Hz,dutyS 10% > > +2 A Peak Gate Voltage Vom £2 50Hz,dutyS 10% > > £10 v Junction Temperature Tj > > 125 °C Storage Temperature Tstg > ~40to +125 °C Weight > > 1.8 g Electrical Characteristics at Ta= 25°C min typ max unit Repetitive Peak Iprm Tj=125°C,Vp=VprmM 2 mA OFF-State Current Peak ON-State Voltage Vim Iym=17A 15 OU Critical Rate of Rise of (dv/dt)e Tj=125°C,Vp=200V (C), 10 Vis OFF-State Voltage 400V(E to G) Holding Current Jn Ri =1002 50 mA Continued on next page. > : The gate trigger mode is shown below. a es ee Package Dimensions 1144 Poe TH A titre) a ee ee 17.0 13.6 50,33 6mm F| —— le ar SSS 8] 8 ile) == 3f ar pel LAP ty as ay 8 i SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3019TA,TS No.2303-1/3

Continued from preceding page. min typ max unit Gate Trigger Current (1) Igr Vp=12V,R,=202 30 mA ” (I) ler Vp=12V,R, =202 30 mA ” (il) Igr Vp=12V,Ry,=202 50 mA ” (VY) Igr Vp=12V,R,=209 30 mA Gate Trigger Voltage (I) Vor Vp=12V,R_=202 2 v » dl) Ver Vp=12V,Ry,=202 2 Vv ” (il) = Ver Vp=12V,Ry,=200 2 Vv ” (VY) Ver Vp=12V,Ry=202 2 Vv Gate Nontrigger Voltage Veo Tce=125°C,Vp= VprM 0.2 v Thermal Resistance Rtng-c Between junction and case,AC. 3.0 °C/W CSS ae Z| . . a a Zod < Rinne; ra Et ft} 4 7 t So 21] ee eee ay i a a TT | 2, Jr TT e 44 ty a of fi | T | TT | ‘ Os 0.8 1.2 16 20 24 28 32 10 3 5.7 10 100 ON-State Voltage, V7 — V Number of Cycles at 50Hz,n Vg - Ig (1) 5 Vg - Ic (2)

7 Minimum gate current and voltage required to

Shaded area indicates possible triggering —40°CIgp (I) 16 4 ep Co ints at —40°C to + 125°C. Ze

2 L, 2s WZZO2

3 [1 SX circuit ond line 3 | Z LLEBEE. <—25'Vor Ss BAZ by [eae J Neeser — Ze © ~sorcigr (1,0, IV) AT 1 | ob [t2s'c10r a 04 68 E 6 20 24 () 40 80 120 60 200 wo Gate Current,lg — A Gate Currentlg ~ mA z “__Pr(AV) ~ IT(RMS) Ta max - I7(RMS)

8 Sine full-wave 140 Sine full-wave

z | | | ff} eh TT zx at a2 1 ed ai a2 Ea x IW g Po) AT 3” = DRO 2) angh 25 or > angle a angle J 28 2 NaN me .

5 Q 1+ @2=360' g& SNGN ig 7, Q 1+ A2=360

8 2 : A 2 & col INN 5 3 [7 Se NNN ae? eLi TPR Wea | gs a ao SEN Page ei [brt tT | a EA en] | 54 a gE 29 WIN (age a & ol] 9 Kd I Fy [) 2 6 6 8 vn a 1% bd ° & RMS ON-State Current,lnyems) — A RMS ON-State Current,lg¢ams) — A CI ate rroniiemsy A BON Stato Currently A No.2303-2/3

iso Tc max - IT(RMS) 160 Igt - Tc REE TTT Ty gf PET CT ee > 120 140) RL=200 ‘ > oe ‘ety La ea = Fo fT tT Tt iT | ee 22 ls 1 Nee Be TSinetull-wave ne [| ge | Le Bas UCRND CC <8 5 6 <8 5 NI 28 40 2 a IN z : — £8 7 Ghele 8 a ee dita | fT | TS °F 10 7 16 -60 =20 2 60 100 0 RMS ON‘State Currentlnnns) — A Case Temperature,Te — °C

16 Vet = Tc 2, Ty - Tc

, E-LETET TT eee vs ton0 tat NET TT ga LN, LET ETT s™ SO 1 NY eLEPN LETT STING ae Soa Pt gS tt “Sos | Pe SJ 25 {tos eg LETT PSS etl feu tPA gy,j//)] 7 | Rew & 04 [™ 36 as SCOOP Creer PEP PT ry pipe tye Sey 0 “ a 0 ro Oh 2) & «© 0 Case Temperature,Te — °C Case Temperature,Te — °C g 2 Rth(J-c) = t 100 Igr( tw) /IGT_- ne ee eee 3 0 5 Tor $,[ TT Terre Try 11 itt]

4 Sr s rd

: S 7 gi Thi rs Ww PTET 1] esi naa 3 ee Bro NN mo Yori | 2 Sy Ben a =! Ei I LEE aT \\ TONS COTE 28 FI Eee ERNE Peete B AS@ Seo fost ies Se BJ TTT ee ee 10 FF =>. fol LUT TTT TTT: EH EEE Eos st] 1 eS es 10 10 100 1000 10 0 2 3 37 100 Time,t - ms Gate Trigger Pulse Width,t,, — ps MENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses ‘associated with such use: : @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. : HE Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is acourate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. —— eee Ne2303-3/3