DTC8-N SANYO | Alldatasheet
Document overview
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Technical content
Features
- Peak OFF-state voltage : 200 to 600V
- RMS ON-state current : 8A
- TO-220 package. Repetitive Peak V DRM 200 400 600 V OFF-StateVoltage RMS ON-State Current I T(RMS) Tc=105°C, single-phase fifi 8A full-wave Surge ON-State Current I TSM Peak 1 cycle, 50Hz fifi 80 A Amperes Squared-Seconds ∫i2T·dt 1ms ≤t≤10ms fifi 32 A 2s Peak Gate Power Dissipation P GM f‡50Hz, duty≤10% fifi 5W Average Gate Power Dissipation PG(AV) fifi 0.5 W Peak Gate Current I GM f‡50Hz, duty≤10% fifi ±2 A Peak Gate Voltage V GM f‡50Hz, duty≤10% fifi ±10 V Junction Temperature Tj fifi 125 °C Strage Temperature Tstg fi –40 to +125 °C Weght fifi 1.8 g Electrical Characteristicsat Ta=25°C min typ max unit Repetitive Peak I DRM Tj=125°C, VD =V DRM 2m A OFF-State Current Peak ON-State Voltage V TM ITM =12A 1.5 V Critical Rate of Rise of dv/dt Tj=125°C, V D =200V (C), 10 V/µs OFF-State Voltage 400V (E to G) Holding Current I H R L=100Ω 50 mA Gate Trigger Current* (I) I GT V D =12V, RL=20Ω 30 mA (II) I GT V D =12V, RL=20Ω 30 mA (III) I GT V D =12V, RL=20Ω 50 mA (IV) I GT V D =12V, RL=20Ω 30 mA Gate Trigger Voltage* (I) V GT V D =12V, RL=20Ω 2V (II) V GT V D =12V, RL=20Ω 2V (III) V GT V D =12V, RL=20Ω 2V (IV) V GT V D =12V, RL=20Ω 2V Gate Nontrigger Voltage V GD Tc=125°C, VD =V DRM 0.2 V Thermal Resistance Rth(j-c) Between junction and case, AC 2 °C/W * : The gate trigger mode is shown below. Trigger mode T2 T1 G I + – + II + – – III – + + IV – + – Package Dimensions 1155A (unit : mm)
No.1877-2/3 ON-State Voltage, VT – V ON-State Current, IT – A Cate Current, IG – A Gate Voltage, VG – V RMS ON-State Current, IT(RMS) – A Average ON-State Power Dissipation, PT(AV) – W RMS ON-State Current, IT(RMS) – A Maximum Allowable Ambient Temperature, Ta max – °C Cate Current, IG – A Gate Voltage, VG – V Number of Cycles at 50Hz, n Surge ON-State Current, ITSM – A RMS ON-State Current, IT(RMS) – A Maximum Allowable Case Temperature, Tc max – °C Case Temperature, Tc – °C Gate Trigger Current, IGT – mA
No.1877-3/3 N o products described or contained herein are intended for use in surgical im plants, life-support system s, aerospace equipm ent, nuclear pow er control system s, vehicles, disaster/crim e-prevention equipm ent and the like, the failure of w hich m ay directly or indirectly cause injury, death or property lose. Anyone purchasing any products described or contained herein for an above-m entioned use shall: Accept full responsibility and indem nify and defend SAN YO ELEC TR IC C O ., LTD ., its affiliates, subsidiaries and distributors and all their officers and em ployees, jointly and severally, against any and all claim s and litigation and all dam ages, cost and expenses associated w ith such use: N ot im pose any responsibilty for any fault or negligence w hich m ay be cited in any such claim or litigation on SAN YO ELEC TR IC C O ., LTD ., its affiliates, subsidiaries and distributors or any of their officers and em ployees jointly or severally. Inform ation (including circuit diagram s and circuit param eters) herein is for exam ple only; it is not guarant- eed for volum e production. SAN YO believes inform ation herein is accurate and reliable, but no guarantees are m ade or im plied regarding its use or any infringem ents of intellectual property rights or other rights of third parties. This catalog provides inform ation as of O ctober, 1997. Specifications and inform ation herein are subject to change w ithout notice. Case Temperature, Tc – °C Gate Trigger Current, IGT – V Time, t – ms Transient Thermal Impedance, Rth(j-c) – °C/W Gate Trigger Pulse Width, tw – µs IGT (tw) / IGT – % Case Temperature, Tc – °C Holding Current, IH – mA